BD677A

Description：TRANS NPN DARL 60V 4A TO-126
Series：-

SKU:d41694b700e4 Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：TRANS NPN DARL 60V 4A TO-126
Series：-
Mfr：onsemi
Package：Bulk
Transistor Type：NPN - Darlington
Current - Collector (Ic) (Max)：4:00 AM
Voltage - Collector Emitter Breakdown (Max)：60 V
Vce Saturation (Max) @ Ib, Ic：2.8V @ 40mA, 2A
Current - Collector Cutoff (Max)：500µA
DC Current Gain (hFE) (Min) @ Ic, Vce：750 @ 2A, 3V
Power - Max：40 W
Frequency - Transition：-
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-225AA, TO-126-3
Supplier Device Package：TO-126
Grade：-
Qualification：-

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BD677A

Overview

The BD677A is an NPN epitaxial silicon Darlington transistor manufactured by onsemi. It features a monolithic configuration with integrated antiparallel collector-emitter diode. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 60 V, maximum collector-base voltage (VCBO) of 60 V, and emitter-base voltage (VEBO) of 5 V. The device supports a maximum DC collector current of 4 A and power dissipation of 40 W. Minimum DC current gain (hFE) is 750. It operates in a TO-126-3 package with a maximum junction temperature of +150°C.

Feature Summary

Monolithic Darlington configuration with high hFE linearity
Integrated antiparallel collector-emitter diode
High transition frequency (fT)

Applications

Power switching applications
Motor control circuits
Relay drivers

Procurement Notes

Verify component authenticity through authorized channels as the part may be subject to obsolescence or limited availability. Confirm RoHS compliance status via official material composition documents before integration. Ensure thermal management design accounts for the specified power dissipation limits in the TO-126-3 package to maintain reliability within the operating temperature range.

Selection Notes

Select this component for designs requiring high current gain and robust switching capabilities in single-transistor configurations. The integrated flyback diode simplifies circuit topology for inductive loads. Verify that the 60 V voltage rating aligns with system supply constraints and transient conditions. Consider thermal resistance characteristics when designing heat sinking solutions for continuous 4 A operation.

Part Context

The BD677A belongs to the BD677A series of complementary silicon power Darlington transistors from onsemi. These devices utilize planar base island technology for improved performance and reliability. The series offers both NPN and PNP polarities with voltage ratings up to 400 V, catering to various power switching and amplification requirements in industrial and consumer electronics.

Replacement Considerations

Consult official substitution guides for compatible alternatives. Verify pinout compatibility and electrical parameter equivalence for any cross-reference parts.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

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Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

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Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.