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The BD680A is a PNP power Darlington transistor manufactured by STMicroelectronics. It features a monolithic Darlington configuration with an integrated antiparallel collector-emitter diode, built using planar base island technology. Key electrical parameters include a maximum collector current (Ic) of 4 A and a collector-emitter breakdown voltage (Vceo) of 80 V. The device has a maximum power dissipation of 40 W and operates at junction temperatures up to 150°C. DC current gain (hFE) is specified as a minimum of 750 at Ic=2A and Vce=3V. The saturation voltage is 2.8 V max at Ib=40mA and Ic=2A. Collector cutoff current is 500µA max.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for obsolescence notices, as the BD680A may be discontinued. Ensure the package type matches design requirements before ordering. Review datasheet revisions for any parameter updates.
Select this component for applications needing high current handling with moderate voltage ratings. Consider the thermal management requirements due to 40W power dissipation. Verify that the PNP polarity and Darlington structure align with circuit topology needs. Check compatibility with driving logic levels given the saturation voltage characteristics.
The BD680A belongs to the BD6xx series of power Darlington transistors from STMicroelectronics. This family includes complementary NPN and PNP variants designed for general-purpose power switching and amplification. The devices utilize planar base island technology for improved reliability and performance compared to older technologies.
BD680 is listed as a similar active replacement by STMicroelectronics.