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The BD680ASTU is a PNP power Darlington transistor manufactured by onsemi. It utilizes planar base island technology with a monolithic Darlington configuration and an integrated antiparallel collector-emitter diode. The device features good hFE linearity and high fT frequency. Key electrical parameters include a maximum collector current (Ic) of 4 A, a collector-emitter breakdown voltage (Vceo) of 80 V, and a maximum power dissipation of 40 W. It operates within a junction temperature range up to 150°C.
Verify the manufacturer marking and date code against official onsemi documentation. Confirm the package type matches SOT-32-3 specifications. Ensure the component is sourced from authorized distributors to avoid counterfeit parts. Check RoHS compliance status if required for specific environmental regulations.
Select this component when a PNP Darlington transistor with 80 V rating and 4 A continuous current capability is required. Consider the integrated antiparallel diode for inductive load protection. Evaluate thermal management requirements given the 40 W power dissipation limit and 150°C junction temperature rating.
This part belongs to the BD680 series of PNP power Darlington transistors. The 'A' suffix typically denotes specific binning or packaging variations within the family. The 'STU' suffix indicates the specific tape and reel packaging format used for automated assembly processes.
BD680 is a confirmed substitute part number for the BD680ASTU.