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The BD681G is a single NPN power Darlington transistor manufactured by onsemi. It features a monolithic configuration with an integrated antiparallel collector-emitter diode. The device supports a maximum DC collector current of 4 A and offers high linearity in hFE. Key voltage ratings include a collector-emitter breakdown voltage (VCEO) of 100 V, a collector-base voltage (VCBO) of 100 V, and an emitter-base voltage (VEBO) of 5 V. It operates within a temperature range of -55°C to +150°C and is housed in a TO-225AA through-hole package.
Verify the specific suffix 'G' corresponds to the RoHS-compliant version as indicated by distributor listings. Confirm the package type is TO-225AA (CASE77) and ensure the manufacturer source is onsemi. Cross-reference the datasheet revision to confirm electrical characteristics match the required design specifications before finalizing procurement.
Select this component when a high-current NPN switch with built-in flyback protection is needed. The integrated antiparallel diode simplifies circuit design for inductive loads. Ensure the thermal management strategy accommodates the TO-225AA package's dissipation capabilities under the specified 4 A load conditions.
This part belongs to the BD681 series of bipolar power transistors. It utilizes planar base island technology for robust performance. The series includes both NPN and PNP variants with voltage ranges extending up to 400 V, catering to diverse power switching and amplification requirements in industrial and consumer electronics.
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing pinouts and thermal constraints if considering alternative Darlington transistors from other manufacturers.