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The BD681STU is a single NPN power Darlington transistor manufactured by onsemi. It features a maximum collector-emitter voltage (VCEO) of 100 V and a maximum DC collector current (IC) of 4 A. The device utilizes a monolithic Darlington configuration with an integrated antiparallel collector-emitter diode. It is housed in a TO-225AA package, also known as CASE77, designed for through-hole mounting. The component operates within a temperature range of -55 °C to +150 °C junction temperature.
Verify the specific suffix STU against the official onsemi datasheet to confirm the exact package variant and marking code. Ensure the ordering part number matches the required thermal and mechanical specifications for your PCB layout. Confirm RoHS compliance status directly from the manufacturer's documentation prior to procurement.
Select this component for high-gain amplification or switching tasks requiring substantial current handling capabilities. The integrated flyback diode simplifies circuit design for inductive loads. Consider the thermal resistance of the TO-225AA package when designing heat dissipation strategies for continuous operation at high currents.
This device belongs to the BD681 series of bipolar power transistors. It serves as the NPN counterpart to the BD680 PNP Darlington transistor. The series is characterized by planar base island technology, offering robust performance in power electronics applications where high current gain and voltage tolerance are critical requirements.
Check for direct cross-reference part numbers such as BD681 from other manufacturers like STMicroelectronics. Verify pinout compatibility and electrical parameter equivalence before substitution.