BD682G

$1.31

Description：TRANS PNP DARL 100V 4A TO-126
Series：-

SKU:9dd279a27b00 Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：TRANS PNP DARL 100V 4A TO-126
Series：-
Mfr：onsemi
Package：Bulk
Transistor Type：PNP - Darlington
Current - Collector (Ic) (Max)：4:00 AM
Voltage - Collector Emitter Breakdown (Max)：100 V
Vce Saturation (Max) @ Ib, Ic：2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max)：500µA
DC Current Gain (hFE) (Min) @ Ic, Vce：750 @ 1.5A, 3V
Power - Max：40 W
Frequency - Transition：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-225AA, TO-126-3
Supplier Device Package：TO-126
Grade：-
Qualification：-

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BD682G

Overview

The BD682G is a plastic medium-power silicon PNP Darlington transistor manufactured by onsemi. It features a monolithic construction with an integrated antiparallel collector-emitter diode and high DC current gain. The device operates within a collector-emitter voltage (VCEO) of 100 Vdc and supports a maximum collector current (IC) of 4.0 Adc. Total device dissipation reaches 40 W at a case temperature of 25 °C, derating linearly above this threshold. The component functions reliably across a junction temperature range of -55 °C to +150 °C.

Feature Summary

Monolithic Darlington configuration with integrated antiparallel collector-emitter diode
High DC current gain ensuring efficient signal amplification
Pb-Free and RoHS compliant packaging

Applications

Output devices in complementary general-purpose amplifier applications
Medium-power switching circuits requiring high current handling
Audio power amplifier stages

Procurement Notes

Verify the active status of the BD682G before design finalization, as datasheet documentation indicates potential discontinuation for specific variants within the series. Confirm package style and pinout compatibility with existing board layouts. Ensure thermal management strategies align with the specified power derating curves to maintain reliability under operational loads.

Selection Notes

Select the BD682G when a PNP polarity is required for complementary designs paired with NPN counterparts like the BD681G. Evaluate the 100 V breakdown voltage against circuit peak requirements. Consider the TO-225 package constraints for heat dissipation and mounting space. Verify that the minimum hFE meets the drive requirements for the intended load conditions.

Part Context

The BD682G belongs to the BD676/BD678/BD680/BD682 series of plastic medium-power silicon PNP Darlingtons. This series is designed to complement the BD675/BD677/BD679/BD681 NPN series. The components utilize planar base island technology for robust performance in general-purpose amplifier and switching roles.

Replacement Considerations

The BD682G is functionally equivalent to the MJE 703 transistor. Designers should verify pinout compatibility and electrical parameter overlaps when substituting these parts.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

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Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

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Mode of Transportation

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Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.