Single Bipolar Transistors BDX33C product image

BDX33C

$0.33
  • Description:TRANS NPN DARL 100V 10A TO-220AB
  • Series:-

SKU:f43cdb7b7b81 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

BDX33C is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN DARL 100V 10A TO-220AB. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for BDX33C

  • Description:TRANS NPN DARL 100V 10A TO-220AB
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:NPN - Darlington
  • Current - Collector (Ic) (Max):10:00 AM
  • Voltage - Collector Emitter Breakdown (Max):100 V
  • Vce Saturation (Max) @ Ib, Ic:2.5V @ 6mA, 3A
  • Current - Collector Cutoff (Max):500µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:750 @ 3A, 3V
  • Power - Max:70 W
  • Frequency - Transition:-
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220AB
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for BDX33C

BDX33C

Single Bipolar Transistors Overview

The BDX33C is a silicon epitaxial-base NPN power transistor in a monolithic Darlington configuration. It is housed in a TO-220AB through-hole package designed for high-current applications. Key electrical specifications include a collector-emitter sustaining voltage (VCEO) of 100 V and a maximum DC collector current of 10 A. The device features a minimum DC current gain (hFE) of 750 and can dissipate up to 70 W of power. It operates at a maximum junction temperature of +150°C and includes built-in base-emitter shunt resistors.

Single Bipolar Transistors Feature Summary

  • Monolithic Darlington construction with integrated base-emitter shunt resistors
  • High DC current gain suitable for low-level drive applications
  • Designed for general-purpose and low-speed switching operations

Single Bipolar Transistors Applications

  • General purpose switching circuits
  • Low speed switching applications
  • Power linear applications

Single Bipolar Transistors Procurement Notes

Verify the manufacturer origin, as both STMicroelectronics and onsemi produce this part number. Confirm the specific suffix designation matches the required voltage rating (100 V for C variant). Ensure the package type is TO-220AB and check RoHS compliance status against the latest datasheet revision before procurement.

Single Bipolar Transistors Selection Notes

Select the BDX33C when a high-gain NPN switch is required for driving loads up to 10 A. The 100 V breakdown voltage makes it suitable for medium-voltage AC or DC control systems. Consider the complementary PNP BDX34C for push-pull configurations. Evaluate thermal management requirements due to the 70 W power dissipation capability in the TO-220AB package.

Single Bipolar Transistors Part Context

The BDX33C belongs to the BDX33/BDX34 family of silicon power transistors. This series provides complementary NPN and PNP options for versatile circuit design. The devices are engineered for robust performance in industrial and consumer electronics where reliable switching and amplification are critical.

Single Bipolar Transistors Replacement Considerations

The BDX33B is a compatible alternative with a lower voltage rating of 80 V. Designers must verify that the system voltage does not exceed the substitute's breakdown limits. Other manufacturers may offer equivalent parts under different part numbers requiring pin-compatible verification.

BDX33CBDX33C
$0.33
Buy Now