BDX53C

Single Bipolar Transistors Overview

The BDX53C is an NPN power Darlington transistor manufactured by STMicroelectronics using planar base island technology. It features a monolithic configuration with an integrated antiparallel collector-emitter diode. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 100 V, a maximum collector-base voltage (VCBO) of 100 V, and a maximum emitter-base voltage (VEBO) of 5 V. The device supports a maximum DC collector current of 8 A and has a power dissipation rating of 60 W. It offers a minimum DC current gain (hFE) of 750 and operates at temperatures up to +150 °C. The component is housed in a TO-220-3 through-hole package.

Single Bipolar Transistors Feature Summary

• Monolithic Darlington configuration with integrated antiparallel collector-emitter diode
• Good hFE linearity for consistent amplification performance
• High transition frequency (fT) capability

Single Bipolar Transistors Applications

• Power switching applications requiring high current handling
• Linear amplifier circuits utilizing Darlington topology
• Motor control interfaces

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct voltage grade and packaging variant. Confirm RoHS compliance status and lead-free manufacturing details directly from the product documentation before procurement. Ensure thermal management solutions are adequate for the specified 60 W power dissipation limit in the intended operating environment.

Single Bipolar Transistors Selection Notes

Select this component when high current gain and robust power handling are required in a single package. The integrated freewheeling diode simplifies circuit design for inductive loads. Consider the TO-220-3 package for through-hole mounting and effective heat sinking capabilities compared to surface-mount alternatives.

Single Bipolar Transistors Part Context

The BDX53C belongs to the BDX53 series of complementary power Darlington transistors produced by STMicroelectronics. This series utilizes planar base island technology to achieve high reliability and performance. The family includes both NPN and PNP variants, offering designers flexibility in creating push-pull or bridge configurations for various power electronics applications.

Single Bipolar Transistors Replacement Considerations

Consult official cross-reference lists for verified substitutes. Ensure any replacement matches the 100 V voltage rating, 8 A current capacity, and TO-220-3 package form factor.