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Product Detailed Parameters
- Description：RF TRANS NPN 15V 5GHZ PG SOT-23
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：15V
- Frequency - Transition：5GHz
- Noise Figure (dB Typ @ f)：1.4dB ~ 2dB @ 900MHz ~ 1.8GHz
- Gain：10.5dB ~ 16dB
- Power - Max：280mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：70 @ 15mA, 8V
- Current - Collector (Ic) (Max)：45mA
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：PG-SOT23
- Grade：-
- Qualification：-
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Overview
The BF 775 E6327 is a silicon NPN RF bipolar junction transistor manufactured by Infineon Technologies. It is housed in an SOT-23-3 surface-mount package and operates within a temperature range of -65°C to +150°C. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 15 V, a collector-base voltage (VCBO) of 20 V, and an emitter-base voltage (VEBO) of 2.5 V. The device supports a maximum DC collector current of 45 mA with a continuous rating of 30 mA, while dissipating up to 280 mW. Its gain-bandwidth product (fT) reaches 5 GHz.
Feature Summary
- Designed for high-frequency radio frequency applications utilizing silicon technology.
Applications
- RF signal amplification circuits
- High-frequency switching applications
Procurement Notes
This component has reached the end-of-life stage and is officially discontinued by the manufacturer. Verification of availability should focus on existing stock from authorized distributors or secondary market suppliers rather than direct manufacturing orders. Buyers must confirm the authenticity and storage history of available units due to the obsolescence status.
Selection Notes
Engineers requiring this specific part number must evaluate alternative components as it is no longer in production. Selection criteria should prioritize matching the original 5 GHz gain-bandwidth product, 15 V collector-emitter voltage, and SOT-23-3 footprint. Compatibility checks must ensure that substitute devices meet the same thermal and current handling requirements for the intended RF application.
Part Context
The BF 775 belongs to Infineon's discrete semiconductor portfolio focused on RF transistors. This specific model represents a legacy silicon NPN design optimized for radio frequency performance. It is distinct from newer wideband or SiGe technologies offered in the company's current lineup.
Replacement Considerations
No public confirmed substitute part numbers are documented for this obsolete component. Engineers should consult official replacement guides or contact the manufacturer for validated alternatives that match the required electrical and mechanical specifications.
FAQ
What is the current production status of the BF 775 E6327?
The BF 775 E6327 is officially discontinued and has reached its end-of-life stage.
What is the maximum power dissipation rating for this transistor?
The maximum power dissipation (Pd) for the BF 775 E6327 is 280 mW.
Does the BF 775 E6327 support automotive qualification standards?
Available documentation does not indicate that this specific part number holds AEC-Q100 automotive qualification.
