BF1009SE6327HTSA1

Overview

The BF1009SE6327HTSA1 is a silicon N-channel MOSFET tetrode designed for low noise and high gain applications in controlled input stages up to 1 GHz. It features an integrated biasing network and operates at a voltage of 9 V. The device provides a typical power gain of 22 dB and a noise figure of 1.4 dB at 800 MHz. Key electrical parameters include a drain-source breakdown voltage of 12 V, continuous drain current of 25 mA, and forward transconductance of 30 mS. It is qualified according to AEC Q101 standards.

Feature Summary

• Integrated biasing network simplifies circuit design
• High gain performance suitable for RF input stages
• Low noise figure for sensitive signal processing
• AEC Q101 qualification for automotive reliability

Applications

• Low noise, high gain controlled input stage
• RF amplifier circuits operating up to 1 GHz
• Automotive electronic systems requiring AEC Q101 compliance

Procurement Notes

Verify the specific package variant (SOT143 or SOT143R) required for the assembly process. Confirm RoHS compliance status as standard packages are lead-free. Ensure handling precautions for ESD-sensitive devices are followed during storage and installation. Check availability of Pb-containing options only through special request if necessary.

Selection Notes

Select this component when designing RF stages requiring high gain and low noise within a 9 V operating range. Consider the integrated biasing network to reduce external component count. Evaluate thermal resistance limits based on the expected ambient temperature and power dissipation requirements. Ensure the application frequency does not exceed the 1 GHz operational limit.

Part Context

This part belongs to Infineon's silicon N-channel MOSFET tetrode family. These devices are engineered specifically for radio frequency applications where high gain and low noise are critical. The integration of the biasing network distinguishes it from standard MOSFETs, offering a compact solution for RF front-end designs.

Replacement Considerations

No official substitutes are listed in the documentation. When evaluating alternatives, match the N-channel tetrode configuration, 12 V breakdown voltage, and SOT143/SOT143R package dimensions. Verify that replacement components meet the same AEC Q101 qualification and RF performance specifications.