BF1100R,215

Overview

The BF1100R,215 is an enhancement type dual-gate N-channel MOSFET designed for VHF and UHF applications. It operates at supply voltages of 9 to 12 V with a drain-source voltage rating of 14 V and a maximum drain current of 30 mA. The device features a low noise figure of 2 dB at 800 MHz and a forward transfer admittance of 28 mS. Packaged in the SOT-143R surface-mount format, it includes an internal bias circuit to ensure superior cross-modulation performance during automatic gain control.

Feature Summary

• Dual-gate architecture with integrated internal bias circuit for enhanced AGC stability
• Optimized short-channel design providing high forward transfer admittance relative to input capacitance
• Low noise characteristics suitable for sensitive RF signal amplification up to 1 GHz

Applications

• VHF and UHF television tuners
• Professional communications equipment
• Low noise amplifier stages in RF receivers

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for recent product change notifications regarding discontinuation or lifecycle changes. Ensure handling procedures protect against static discharge due to gate sensitivity.

Selection Notes

Select this component for designs requiring dual-gate isolation and low noise performance in the VHF/UHF spectrum. Verify that the SOT-143R package fits the PCB footprint constraints. Ensure the operating junction temperature remains within limits and that the 14 V drain-source voltage rating accommodates peak circuit conditions.

Part Context

This part belongs to the BF1100 series of dual-gate MOS-FETs manufactured by NXP Semiconductors. It is specifically engineered for RF amplification tasks where linearity and noise performance are critical. The 'R' suffix indicates the SOT-143R plastic microminiature package variant.

Replacement Considerations

BF1100 (SOT-143 package)