BF1101R,215

Overview

The BF1101R,215 is an N-channel dual-gate MOS-FET discrete semiconductor from NXP Semiconductors. It features a short channel transistor with high forward transfer admittance to input capacitance ratio and low noise gain controlled amplifier performance up to 1 GHz. The device includes partly internal self-biasing circuitry for good cross-modulation performance during AGC and DC stabilization. Integrated diodes between gates and source protect against excessive input voltage surges. It operates with a 3 to 7 V supply voltage.

Feature Summary

• Dual-gate N-channel MOS-FET structure with integrated gate-source protection diodes
• Low noise gain controlled amplifier operation up to 1 GHz frequency range
• Internal self-biasing circuit ensures stable DC operation and improved cross-modulation performance
• High forward transfer admittance to input capacitance ratio for enhanced signal handling

Applications

• Television tuners
• Professional communications equipment
• VHF and UHF applications

Procurement Notes

Verify the specific ordering code BF1101R,215 corresponds to the SOT143R plastic package variant as defined in the product specification. Confirm that the component meets the required thermal resistance and power dissipation limits for your specific application environment. Ensure compatibility with the specified drain-source and gate-source voltage ratings during system design validation.

Selection Notes

Select this component for designs requiring low noise amplification in the VHF and UHF bands. The dual-gate architecture allows for effective gain control via the second gate while maintaining signal integrity at the first gate. Consider the SOT143R package dimensions and pin configuration for PCB layout. Verify that the operating junction temperature remains within the specified limits under maximum power dissipation conditions.

Part Context

This part belongs to the BF1101 series of N-channel dual-gate MOS-FETs, which also includes the BF1101 (SOT143B) and BF1101WR (SOT343R). These devices are designed for RF applications where low noise and high linearity are critical. The series utilizes enhancement type technology with interconnected source and substrate for optimal performance in television and communication systems.

Replacement Considerations

Direct substitutes include BF1101 and BF1101WR, though package differences (SOT143B and SOT343R respectively) require mechanical adaptation. Ensure functional equivalence regarding electrical parameters such as forward transfer admittance and noise figure when selecting alternative packages.