BF1101WR,115

Overview

The BF1101WR,115 is an N-channel dual-gate MOS-FET encapsulated in the SOT343R plastic package. It operates with a drain-source voltage of up to 7 V and a maximum drain current of 30 mA. The device features a forward transfer admittance ranging from 25 to 40 mS and an input capacitance at gate 1 between 2.2 and 2.7 pF. Total power dissipation is limited to 200 mW, with an operating junction temperature range extending to +150 °C.

Feature Summary

• Dual-gate architecture providing low noise gain control functionality up to 1 GHz
• High forward transfer admittance to input capacitance ratio for enhanced signal performance
• Integrated internal self-biasing circuit ensuring stable DC operation and improved cross-modulation characteristics during automatic gain control

Applications

• VHF and UHF television tuners
• Professional communications equipment
• Low noise gain controlled amplifier circuits

Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm package marking codes match official specifications. Ensure handling procedures prevent electrostatic discharge damage. Review latest datasheet revisions before design finalization. Validate supply chain documentation against manufacturer records.

Selection Notes

Select this component for applications requiring precise gain control in VHF and UHF frequency ranges. Evaluate thermal resistance requirements against expected power dissipation levels. Consider the specific pin configuration of the SOT343R package during PCB layout planning. Assess compatibility with existing biasing networks for optimal cross-modulation performance.

Part Context

This part belongs to the BF1101 family of N-channel dual-gate MOS-FETs manufactured by NXP Semiconductors. The BF1101WR variant specifically utilizes the SOT343R surface-mount package. It shares core electrical characteristics with the BF1101 and BF1101R models, differing primarily in physical packaging and pin arrangement.

Replacement Considerations

BF1101; BF1101R

FAQ

What is the function of the second gate?

The second gate serves as the Automatic Gain Control (AGC) input, allowing external voltage adjustment to modulate the amplifier's gain.

How does the device protect against input voltage surges?

Integrated diodes are connected between the gates and the source to clamp excessive input voltage surges and protect the internal structure.

What is the typical noise figure at 800 MHz?

The typical noise figure is 1.7 dB, with a maximum specified value of 2.5 dB when measured at 800 MHz under standard test conditions.