BF1102R,115

Overview

The BF1102R,115 is a dual N-channel dual-gate MOS-FET in a SOT363 package. It integrates two low-noise gain-controlled amplifiers with shared source and gate 2 pins. Designed for 5 V applications, it features high forward transfer admittance and superior cross-modulation performance during automatic gain control (AGC). The device includes an internal bias circuit for DC stabilization and integrated diodes between gates and source to protect against excessive input voltage surges.

Feature Summary

• Integrates two equal dual-gate MOS-FETs with shared source and gate 2 pins
• Features an internal bias circuit for DC stabilization and excellent cross-modulation performance at 5 V supply
• Includes integrated diodes between gates and source to protect against excessive input voltage surges

Applications

• Gain controlled low noise amplifier for VHF applications
• Gain controlled low noise amplifier for UHF applications
• Television tuners
• Professional communications equipment

Procurement Notes

Verify the component status as discontinued or no longer manufactured before design-in. Confirm that the SOT363 micro-miniature plastic package dimensions match the target footprint. Ensure the 5 V supply requirement aligns with the system architecture. Check for updated datasheets if available, as this document supersedes earlier versions from July 1999.

Selection Notes

Select this component for designs requiring dual low-noise amplification in a compact surface-mount package. It is optimized for 5 V operation with specific attention to cross-modulation performance under AGC conditions. Consider the shared source and gate 2 pin configuration when designing the schematic to ensure proper biasing and signal routing for both amplifier channels.

Part Context

This part belongs to the NXP discrete semiconductor portfolio, specifically categorized as a dual N-channel dual-gate MOS-FET. It is designed for RF and IF stages in communication systems where low noise and high linearity are critical. The SOT363 package allows for space-constrained PCB layouts typical in consumer electronics and professional audio-visual equipment.

Replacement Considerations

BF1102: Pin-compatible alternative with identical electrical characteristics but different marking code (W1 vs W2).

FAQ

What is the function of the shared pins?

The BF1102R has a shared source pin and a shared gate 2 pin for both MOS-FETs, which simplifies the biasing network and reduces the number of external components required.

How does the device handle input voltage surges?

Integrated diodes between the gates and the source provide protection against excessive input voltage surges, enhancing reliability in sensitive RF applications.

What is the primary advantage regarding cross-modulation?

The device offers superior cross-modulation performance during automatic gain control (AGC), ensuring high signal integrity in gain-controlled low-noise amplifier applications.