BF1102R,135

Overview

The BF1102R,135 is a dual N-channel dual-gate MOS-FET in a SOT363 package. It integrates two low-noise gain-controlled amplifiers with shared source and gate 2 pins. Designed for 5 V applications, it features superior cross-modulation performance during automatic gain control (AGC). Key electrical parameters include a drain-source voltage of 7 V, DC drain current of 40 mA, and total power dissipation of 200 mW. Forward transfer admittance ranges from 36 to 43 mS at 15 mA drain current. The device exhibits a noise figure of 2.8 dB at 800 MHz.

Feature Summary

• Integrates two equal dual-gate MOS-FETs with shared source and gate 2 pins within a single micro-miniature plastic package.
• Features an internal bias circuit enabling DC stabilization and high forward transfer admittance to input capacitance ratio.
• Includes integrated diodes between gates and source to protect against excessive input voltage surges.

Applications

• Gain controlled low noise amplifier for VHF applications
• Gain controlled low noise amplifier for UHF applications
• Television tuners
• Professional communications equipment

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component for designs requiring dual independent amplification channels within a compact footprint. Ensure the operating supply voltage aligns with the specified 5 V design target to optimize cross-modulation performance. Verify that the SOT363 package dimensions fit the available board space constraints.

Part Context

This part belongs to the NXP discrete semiconductor portfolio, specifically categorized as RF small signal MOSFETs. It is manufactured by NXP Semiconductors and utilizes silicon technology. The product specification document supersedes earlier data from July 1999.

Replacement Considerations

The BF1102 is the equivalent non-reel version of this component family. Both share identical electrical characteristics and pin configurations. Verify package compatibility when substituting.

FAQ

What is the function of the shared pins on the BF1102R?

The BF1102R features a shared source pin and a shared gate 2 pin for both MOS-FETs, allowing for common grounding and control signal distribution while maintaining separate gate 1 and drain inputs.

How does the BF1102R handle input voltage surges?

Integrated diodes are located between the gates and the source to protect the device against excessive input voltage surges.

What is the typical noise figure at 800 MHz?

The typical noise figure is 2.8 dB when measured at a frequency of 800 MHz under standard test conditions.