BF1107,235

Overview

The BF1107 is a depletion-type N-channel single-gate MOSFET in a SOT23 package. It provides low loss and high isolation for RF switching. Key parameters include an on-state insertion loss of up to 2.5 dB at 50 Ω and 3.5 dB at 75 Ω (50 MHz–860 MHz). Off-state isolation reaches 30 dB under the same conditions. The drain-source on-state resistance is typically 12 Ω with a maximum of 20 Ω at VGS=0V. Gate-source pinch-off voltage ranges from -3 V to -4.5 V. Absolute maximum ratings are 3 V for VDS/VSD, 7 V for VDG/VSG, and 10 mA for ID.

Feature Summary

• Depletion mode operation enables currentless RF switching functionality.
• Integrated protection diodes between gate-source and gate-drain guard against input voltage surges.
• Interchangeable drain and source terminals simplify circuit layout.

Applications

• Passive loop through for VCR tuner
• Transceiver switching

Procurement Notes

Verify the specific ordering suffix matches the required tape-and-reel quantity and packaging variant. Confirm the component status remains active production rather than obsolete or preliminary. Ensure ESD handling protocols are strictly followed during storage and assembly due to device sensitivity. Cross-reference the marking code 'S3p' with the physical package to validate authenticity upon receipt.

Selection Notes

Select this component for applications requiring a compact, low-loss RF switch within the 50 MHz to 860 MHz range. The SOT23 package suits space-constrained designs. Verify that the system voltage does not exceed the 3 V drain-source limit. Consider the interchangeable pinout for flexible PCB routing. Ensure the control logic can provide the necessary negative pinch-off voltage for reliable off-state isolation.

Part Context

This part belongs to NXP's discrete MOSFET portfolio, specifically designed for radio frequency applications. It utilizes a plastic surface-mounted SOT23 package with three leads. The device is classified as a depletion-type field-effect transistor, distinguishing it from enhancement-mode power switches by its normally-on characteristic at zero gate bias.

Replacement Considerations

BF1107W

FAQ

Are the drain and source pins interchangeable?

Yes, the datasheet specifies that the drain and source terminals are interchangeable.

What is the maximum drain-source voltage rating?

The absolute maximum rating for both drain-source voltage (VDS) and source-drain voltage (VSD) is 3 V.

How does the device protect against voltage surges?

It includes integrated diodes between the gate-source and gate-drain terminals to protect against excessive input voltage surges.