BF1108R,215

Overview

The BF1108R,215 is a silicon RF switch combining a depletion-type FET and a band-switching diode in an SOT143R package. It provides low insertion loss of up to 2 dB and high off-state isolation of at least 30 dB up to 1 GHz. The device features integrated protection diodes between gate-source and gate-drain terminals to guard against excessive input voltage surges. Drain and source pins are interchangeable, simplifying circuit layout.

Feature Summary

• Combines a depletion-type FET with a band-switching diode for optimized RF switching performance
• Integrated gate-to-source and gate-to-drain diodes provide protection against input voltage surges
• Interchangeable drain and source pins facilitate flexible PCB routing

Applications

• Passive loop through circuits for VCR tuners
• Transceiver switching applications

Procurement Notes

Verify the specific ordering suffix matches the required package variant. Confirm that the reverse pinning configuration of the SOT143R package aligns with the target schematic design. Ensure ESD handling protocols are strictly followed during transport and assembly due to component sensitivity.

Selection Notes

Select this component for designs requiring low-loss RF switching within the 1 GHz frequency range. Consider the SOT143R package dimensions and reverse pinning arrangement when defining the footprint. Evaluate the need for integrated surge protection if input voltage spikes are anticipated in the signal path.

Part Context

This part belongs to NXP's silicon RF switch portfolio, which includes variants like the BF1108 in the standard SOT143B package. The BF1108R specifically utilizes the SOT143R package with reverse pinning, offering identical electrical characteristics but different physical pin orientation compared to the standard version.

Replacement Considerations

The BF1108 serves as a direct functional substitute, differing only in the SOT143B package and standard pinning configuration rather than electrical performance.

FAQ

Are the drain and source pins interchangeable?

Yes, the datasheet explicitly states that the drain and source pins are interchangeable.

What is the maximum operating frequency?

The device is designed for RF switching applications up to 1 GHz.

How does the device protect against voltage surges?

It incorporates integrated diodes between the gate-source and gate-drain terminals to protect against excessive input voltage surges.