BF1201WR,135

Overview

The BF1201WR,135 is an N-channel dual-gate PoLo MOS-FET manufactured by NXP Semiconductors. It features a short channel design with high forward transfer admittance to input capacitance ratio. The device operates with a drain-source voltage of 10 V and a continuous drain current of 30 mA. Total power dissipation is rated at 200 mW. Key electrical parameters include a typical noise figure of 11.8 dB at 400 MHz and a forward transfer admittance ranging from 23 to 35 mS. The component is housed in the SOT343R plastic surface-mounted package.

Feature Summary

• Dual-gate enhancement type N-channel field-effect transistor with integrated source and substrate interconnection.
• Partly internal self-biasing circuit ensures good cross-modulation performance during automatic gain control.
• Integrated diodes between gates and source protect against excessive input voltage surges.
• Short channel transistor structure provides high forward transfer admittance relative to input capacitance.

Applications

• VHF and UHF applications with 3 to 9 V supply voltage
• Digital and analogue television tuners
• Professional communications equipment

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component for designs requiring low-noise amplification in VHF/UHF bands. Ensure the circuit supports the specified 10 V drain-source voltage limit. Verify thermal management capabilities for the SOT343R package to maintain junction temperature within the 150 °C operating range. Confirm that the dual-gate architecture aligns with the required AGC and impedance matching strategies.

Part Context

This part belongs to the BF1201 series of N-channel dual-gate PoLo MOS-FETs. Variants include BF1201 (SOT143B) and BF1201R (SOT143R). The BF1201WR specifically utilizes the SOT343R package. These devices are designed for RF signal processing where low noise and stable gain control are critical.

Replacement Considerations

Direct substitutes are not explicitly listed in the provided documentation. Engineers should evaluate other N-channel dual-gate MOS-FETs from NXP or compatible manufacturers that match the SOT343R footprint and electrical specifications.

FAQ

What is the function of the second gate?

Gate 2 serves as the control terminal for the amplifier's gain, enabling Automatic Gain Control (AGC) functionality while Gate 1 acts as the primary signal input.

How does the device handle input voltage surges?

Integrated diodes located between the gates and the source provide protection against excessive input voltage surges.

What is the maximum operating junction temperature?

The maximum operating junction temperature (Tj) is 150 °C.