SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BF1202,215 is an N-channel dual-gate PoLo MOS-FET encapsulated in the SOT343R plastic package. It features a drain-source voltage of 10 V and a maximum continuous drain current of 30 mA with total power dissipation of 200 mW. The device exhibits a forward transfer admittance of up to 40 mS and low reverse transfer capacitance. Operating junction temperature reaches 150 °C.
Verify the specific ordering suffix matches the required package variant. The BF1202,215 designation corresponds to the SOT343R package. Confirm that the component meets RoHS compliance standards as indicated in the product specification. Ensure anti-static handling procedures are followed during transport and assembly to prevent electrostatic discharge damage.
Select this component for designs requiring dual-gate control for automatic gain regulation. The integrated self-biasing simplifies circuit topology by reducing external components. Verify that the operating frequency range aligns with the specified admittance and capacitance characteristics. Ensure supply voltages remain within the 3 to 9 V operational window for optimal performance.
This part belongs to the BF1202 series of N-channel dual-gate PoLo MOS-FETs manufactured by NXP Semiconductors. The series includes variants such as BF1202 and BF1202R, which differ primarily in their physical packaging configurations. These devices are engineered for high-frequency signal processing tasks requiring precise gain control and low noise characteristics.
Cross-reference with BF1202R or BF1202 if package compatibility allows. Verify pinout orientation differences between SOT343R and other packages. Ensure electrical parameters match requirements when substituting.