BF1202R,215

Overview

The BF1202R,215 is an N-channel dual-gate PoLo MOS-FET encapsulated in the SOT143R plastic package. It features a drain-source voltage of 10 V and a maximum drain current of 30 mA. The device exhibits a forward transfer admittance ranging from 25 to 40 mS and a reverse transfer capacitance of up to 30 fF at 1 MHz. Operating junction temperature reaches 150 °C with total power dissipation limited to 200 mW.

Feature Summary

• Short channel transistor design providing a high ratio of forward transfer admittance to input capacitance.
• Integrated diodes between gates and source protect against excessive input voltage surges.
• Partly internal self-biasing circuit ensures good cross-modulation performance during AGC and stable DC operation.

Applications

• VHF and UHF applications with 3 to 9 V supply voltage
• Digital and analogue television tuners
• Professional communications equipment

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component for low noise gain controlled amplifier applications requiring dual gate control. Ensure the SOT143R package fits the board layout constraints. Verify that the 10 V drain-source voltage and 30 mA current limits accommodate the circuit requirements. Check thermal resistance values for heat dissipation planning under maximum power conditions.

Part Context

This part belongs to the BF1202 family of N-channel dual-gate PoLo MOS-FETs manufactured by NXP Semiconductors. The BF1202R variant specifically utilizes the SOT143R package, distinguishing it from the standard SOT143B (BF1202) and SOT343R (BF1202WR) packages within the same functional family.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Consult NXP official resources for potential replacements or equivalent devices.