BF1202WR,115

Overview

The BF1202WR,115 is an N-channel dual-gate PoLo MOS-FET manufactured by NXP Semiconductors. It operates with a drain-source voltage of 10 V and a maximum drain current of 30 mA. The device features a forward transfer admittance ranging from 25 to 40 mS and a reverse transfer capacitance of 15 to 30 fF at 1 MHz. It is housed in the SOT343R plastic package. Key electrical parameters include a noise figure of 1.1 to 1.8 dB at 800 MHz and a total power dissipation of 200 mW.

Feature Summary

• Dual-gate enhancement type N-channel field-effect transistor with source and substrate interconnected
• Integrated diodes between gates and source for protection against excessive input voltage surges
• Partly internal self-biasing circuit ensuring good cross-modulation performance during AGC
• Short channel design providing high forward transfer admittance to input capacitance ratio

Applications

• VHF and UHF applications with 3 to 9 V supply voltage
• Digital and analogue television tuners
• Professional communications equipment

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component for designs requiring low-noise amplification in VHF and UHF bands. The dual-gate architecture allows for effective gain control via the AGC terminal while maintaining stability. Ensure the operating junction temperature remains within the specified limits and that the supply voltage does not exceed the absolute maximum ratings to prevent device degradation.

Part Context

This part belongs to the BF1202 series of N-channel dual-gate PoLo MOS-FETs. Variants include the BF1202 (SOT143B) and BF1202R (SOT143R). The BF1202WR specifically utilizes the SOT343R package. These devices are designed for RF applications where low noise and high linearity are critical requirements.

Replacement Considerations

Direct replacements must match the SOT343R package and dual-gate N-channel MOSFET specifications. Verify pinout compatibility, as the BF1202R uses reverse pinning compared to the standard BF1202. Check if alternative parts meet the required noise figure and forward transfer admittance for the target frequency range.

FAQ

What is the function of the integrated diodes in the BF1202WR?

The integrated diodes connect between the gates and the source to protect the device against excessive input voltage surges.

How does the self-biasing circuit affect performance?

The partly internal self-biasing circuit ensures good DC stabilization and maintains excellent cross-modulation performance during Automatic Gain Control (AGC) operation.

What is the recommended supply voltage range for this device?

The BF1202WR is designed for applications utilizing a supply voltage between 3 V and 9 V.