BF1202WR,135

Overview

The BF1202WR,135 is an N-channel dual-gate PoLo MOS-FET manufactured by NXP Semiconductors. It features a short channel design with high forward transfer admittance to input capacitance ratio. The device operates with a drain-source voltage of 10 V and a continuous drain current of 30 mA. Total power dissipation is rated at 200 mW. Forward transfer admittance ranges from 25 to 40 mS. Input capacitance at gate 1 is typically 1.7 pF. Reverse transfer capacitance is 15 to 30 fF. Noise figure is 1.1 to 1.8 dB at 800 MHz. Cross-modulation input level for 1% distortion at 40 dB AGC is 100 to 105 dBμV. Operating junction temperature reaches 150 °C.

Feature Summary

• Dual-gate enhancement type N-channel field-effect transistor with source and substrate interconnected.
• Partly internal self-biasing circuit ensures good cross-modulation performance during automatic gain control and provides DC stabilization.
• Integrated diodes between gates and source protect against excessive input voltage surges.

Applications

• Digital television tuners
• Analogue television tuners
• Professional communications equipment

Procurement Notes

Verify the specific suffix WR indicates the SOT343R plastic package variant. Confirm the component status as production data sheet information before integration. Ensure anti-static handling protocols are followed during transport and assembly due to electrostatic discharge sensitivity. Validate that the supply voltage range aligns with the 3 to 9 V requirement for target applications.

Selection Notes

Select this component for VHF and UHF applications requiring low noise gain controlled amplification. The dual-gate structure supports automatic gain control functions effectively. Consider the SOT343R package dimensions for board layout constraints. Evaluate thermal resistance characteristics relative to the expected power dissipation in the final enclosure design.

Part Context

This part belongs to the BF1202 family of N-channel dual-gate PoLo MOS-FETs. Variants include BF1202 in SOT143B and BF1202R in SOT143R packages. All variants share identical electrical specifications but differ in physical encapsulation. The family is designed for RF signal processing tasks where low noise and stable gain control are critical requirements.

Replacement Considerations

BF1202 and BF1202R are electrically equivalent alternatives within the same product family. Substitution requires verification of package footprint compatibility, specifically comparing SOT343R against SOT143B or SOT143R pin configurations.

FAQ

How does the BF1202WR handle input voltage surges?

Integrated diodes between the gates and the source provide protection against excessive input voltage surges.

What is the purpose of the partly internal self-biasing circuit?

It ensures good cross-modulation performance during automatic gain control operation and provides good DC stabilization.

Which package corresponds to the BF1202WR marking code?

The BF1202WR uses the SOT343R plastic surface-mounted package with reverse pinning.