BF1203,115

Overview

The BF1203,115 is a dual N-channel dual-gate MOS-FET in a SOT363 package. It integrates two low-noise amplifiers with shared source and Gate 2 leads. Key electrical parameters include a drain-source voltage of 10 V and a DC drain current of 30 mA per amplifier. Forward transfer admittance ranges from 23 mS to 40 mS depending on the specific amplifier section. Input capacitance at Gate 1 varies between 1.7 pF and 3.1 pF. Noise figures are specified as low as 0.9 dB at 400 MHz for Amplifier b.

Feature Summary

• Combines two distinct dual-gate MOS-FET amplifiers within a single micro-miniature plastic package.
• Features internal bias circuits that enable DC stabilization and superior cross-modulation performance during automatic gain control.
• Includes integrated protection diodes between the gates and source to guard against excessive input voltage surges.

Applications

• Gain controlled low noise amplifiers for VHF and UHF applications
• Digital television tuners
• Analog television tuners
• Professional communications equipment

Procurement Notes

Verify the component status via official NXP channels before design finalization. Confirm the specific ordering suffix matches the required tape and reel configuration. Ensure electrostatic discharge precautions are observed during handling. Cross-reference the latest datasheet revision to confirm pinout consistency with existing designs.

Selection Notes

Select this component for high-frequency signal paths requiring independent gain control via the second gate. The device offers high forward transfer admittance suitable for VHF/UHF bands. Consider the thermal resistance characteristics when designing heat dissipation strategies for dense PCB layouts.

Part Context

This discrete semiconductor belongs to NXP's portfolio of RF small-signal MOSFETs. It utilizes silicon technology and is designed for surface-mount assembly. The device represents a specialized solution for analog front-end processing in broadcast and communication hardware.

Replacement Considerations

Consult official substitution lists for verified equivalents. Generic replacements may not match the specific dual-gate architecture or cross-modulation performance metrics required for AGC stability.

FAQ

How are the two amplifiers electrically connected?

The two amplifiers share common source and Gate 2 leads, while maintaining separate Gate 1 inputs and Drain outputs.

What is the function of the integrated diodes?

Integrated diodes between the gates and source protect the device against excessive input voltage surges.

Which package type does the BF1203 utilize?

The transistor is encapsulated in a SOT363 micro-miniature plastic surface-mounted package.