BF1207,115

Overview

The BF1207 is a dual N-channel dual gate MOSFET amplifier housed in a SOT363 micro-miniature plastic package. It integrates two amplifiers with shared source and gate2 leads, featuring an internal switch to reduce external component count. The device includes integrated bias circuits for DC stabilization and excellent cross-modulation performance during Automatic Gain Control (AGC). Internal diodes between the gates and source protect against excessive input voltage surges.

Feature Summary

• Combines two low noise gain controlled amplifiers in a single package, one with fully integrated bias and one with partly integrated bias
• Includes an internal switch designed to save external components
• Delivers superior cross-modulation performance during Automatic Gain Control (AGC)
• Features high forward transfer admittance and a high ratio of forward transfer admittance to input capacitance

Applications

• Gain controlled low noise amplifiers for Very High Frequency (VHF) applications
• Gain controlled low noise amplifiers for Ultra High Frequency (UHF) applications
• Digital and analog television tuners operating with 5 V supply voltage
• Professional communication equipment

Procurement Notes

Verify the specific ordering suffix to confirm manufacturing origin, as codes indicate production in Hong Kong, Malaysia, or China. Confirm the current product status via official documentation, as availability may change. Ensure electrostatic discharge precautions are observed during handling due to device sensitivity. Cross-reference the latest datasheet revision before initiating design implementations.

Selection Notes

Select this component for designs requiring dual low noise amplification within a constrained footprint. The shared source and gate2 leads simplify circuit topology by reducing interconnect complexity. Evaluate the internal switch capability to determine if external switching components can be eliminated. Consider the integrated bias circuits for their role in stabilizing direct current operation and enhancing cross-modulation performance under AGC conditions.

Part Context

This device belongs to the category of discrete semiconductor components specifically engineered for radio frequency signal processing. It serves as a specialized solution for front-end stages in communication systems where low noise figure and high linearity are critical. The integration of dual amplifiers into a single micro-package supports miniaturization trends in consumer electronics and professional hardware.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.