BF1208,115

Overview

The BF1208 is a dual N-channel dual gate MOSFET amplifier in a SOT666 package. It integrates two amplifiers with shared source and gate2 leads, plus an internal switch controlled by amplifier B's gate1 bias. Key electrical parameters include a drain-source voltage of 6 V, drain current of 30 mA, and total power dissipation of 180 mW. Forward transfer admittance ranges from 26 to 43 mS depending on the amplifier section. Input capacitance at gate1 is approximately 2.0 to 2.7 pF. Noise figures are typically 1.3 dB at 400 MHz and 1.4 dB at 800 MHz.

Feature Summary

• Combines two low noise gain controlled amplifiers in a single package, one with fully integrated bias and one with partly integrated bias.
• Includes an internal switch operated by the gate1 bias of amplifier B to save external components.
• Provides superior cross-modulation performance during Automatic Gain Control (AGC).
• Features high forward transfer admittance and a high ratio of forward transfer admittance to input capacitance.

Applications

• Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply voltage
• Digital and analog television tuners
• Professional communication equipment

Procurement Notes

Verify the component status as active or archived before procurement. Confirm the specific ordering suffix matches the required package variant. Ensure ESD protection protocols are followed during handling due to device sensitivity. Cross-reference the marking code '2L' for identification. Validate that the application environment stays within the specified thermal and voltage limiting values.

Selection Notes

Select this component for designs requiring dual low-noise amplification in a compact surface-mount form factor. The integrated switch functionality reduces external component count. Consider the 5 V supply requirement and the specific biasing needs for each amplifier section. Evaluate the noise figure and cross-modulation specifications against the target frequency band requirements.

Part Context

This part belongs to the discrete semiconductor category, specifically dual gate MOSFETs designed for RF amplification. It serves as a solution for signal conditioning in radio frequency front-ends. The device replaces discrete dual-gate MOSFET configurations by integrating bias circuits and switching capabilities into a single micro-miniature plastic package.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

FAQ

How is the internal switch in the BF1208 controlled?

The integrated switch is operated by the gate1 bias of amplifier B.

What is the maximum drain-source voltage for the BF1208?

The maximum DC drain-source voltage is 6 V.

Does the BF1208 include protection against input voltage surges?

Yes, it includes integrated diodes between the gates and source to protect against excessive input voltage surges.