BF1208D,115

Overview

The BF1208D is a dual N-channel dual-gate MOSFET amplifier in an SOT666 package. It integrates two amplifiers with shared source and gate2 leads, plus an internal switch controlled by Amplifier B's Gate1 bias. Key electrical parameters include a drain-source voltage of 6 V, total power dissipation of 180 mW, and forward transfer admittance up to 41 mS for Amplifier A at 100 MHz. Noise figures are 0.9 dB at 400 MHz (A) and 1.4 dB at 800 MHz (B).

Feature Summary

• Combines two low noise gain controlled amplifiers in a single package.
• Includes an integrated switch operated by the gate1 bias of amplifier B.
• Features superior cross modulation performance during Automatic Gain Control (AGC).
• Provides high forward transfer admittance and a high admittance-to-capacitance ratio.

Applications

• Gain controlled low noise amplifiers for VHF applications.
• Gain controlled low noise amplifiers for UHF applications.
• Digital and analog television tuners.
• Professional communication equipment.

Procurement Notes

Verify the component status as the datasheet indicates it may be obsolete or discontinued. Confirm the specific ordering suffix matches the required tape and reel quantity. Ensure ESD precautions are strictly followed during handling due to device sensitivity. Validate that the SOT666 package dimensions align with the target PCB footprint requirements.

Selection Notes

Select this component for designs requiring dual low-noise amplification within a constrained space. The integrated switch functionality reduces external component count. Consider the 5 V supply voltage requirement and the specific frequency ranges for VHF/UHF operations. Evaluate thermal resistance characteristics to ensure junction temperatures remain within safe limits under maximum power dissipation conditions.

Part Context

This device belongs to the family of dual N-channel dual-gate MOSFETs manufactured by NXP Semiconductors. It utilizes a plastic surface-mounted SOT666 micro-miniature package. The design incorporates internal bias circuits for DC stabilization and protection diodes between gates and sources to handle input voltage surges effectively.

Replacement Considerations

BF1206F