BF1210,115

BF1210,115

$0.23
  • Description:RF MOSFET 5V 6TSSOP
  • Series:-

SKU:4b46f7d84924 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:RF MOSFET 5V 6TSSOP
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR),Bulk
  • Technology:MOSFET (Metal Oxide)
  • Frequency:400MHz
  • Gain:31dB
  • Voltage - Test:5 V
  • Current Rating (Amps):30mA
  • Noise Figure:0.9dB
  • Current - Test:19 mA
  • Power - Output:-
  • Voltage - Rated:6 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:6-TSSOP
  • Configuration:N-Channel Dual Gate

Download product information

BF1210,115

Overview

The BF1210,115 is a dual N-channel dual-gate MOSFET amplifier in a SOT363 package. It integrates two low-noise gain-controlled amplifiers with shared source and gate2 leads. The device features internal bias circuits for DC stabilization and integrated protection diodes between gates and source. Key electrical parameters include a drain-source voltage of 6 V, drain current of 30 mA, and total power dissipation of 180 mW. Forward transfer admittance ranges from 26 to 43 mS depending on the amplifier channel and bias conditions.

Feature Summary

  • Combines two low noise gain controlled amplifiers in a single micro-miniature plastic package
  • Features superior cross modulation performance during automatic gain control operations
  • Includes internal bias circuits enabling DC stabilization
  • Integrates protective diodes between gates and source to handle input voltage surges

Applications

  • Gain controlled low noise amplifiers for VHF applications
  • Gain controlled low noise amplifiers for UHF applications
  • Digital television tuners
  • Analog television tuners
  • Professional communication equipment

Procurement Notes

Verify component authenticity through authorized NXP Semiconductors distributors or certified partners. Confirm the specific ordering suffix matches the required packaging configuration. Ensure handling procedures adhere to ElectroStatic Discharge (ESD) sensitivity guidelines during transport and assembly to prevent device damage.

Selection Notes

Select this component for designs requiring compact integration of dual RF amplifiers with shared control lines. Evaluate thermal resistance characteristics against system heat dissipation requirements. Verify that the 6 V maximum drain-source voltage aligns with the target supply voltage constraints for VHF and UHF tuner stages.

Part Context

This device belongs to the NXP dual-gate MOSFET family designed for radio frequency signal processing. It serves as a specialized active component for tuning and amplification stages in broadcast and communication hardware. The SOT363 package allows for surface-mount integration in space-constrained electronic assemblies.

Replacement Considerations

BF1210WR,115

BF1210,115BF1210,115
$0.23
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