BF1212R,215

Overview

The BF1212R is an enhancement type N-channel dual-gate MOS-FET encapsulated in the SOT143R plastic package. It features integrated diodes between gates and source to protect against excessive input voltage surges. The device operates with a drain-source voltage of up to 6 V and a drain current of 30 mA, dissipating up to 180 mW. Key electrical parameters include a forward transfer admittance of 28–43 mS, input capacitance at gate 1 of 1.7–2.2 pF, and a noise figure of 1.1–1.8 dB at 800 MHz.

Feature Summary

• Short channel transistor design providing a high forward transfer admittance to input capacitance ratio for efficient signal processing.
• Low noise gain controlled amplifier architecture ensuring excellent low frequency noise performance.
• Partly internal self-biasing circuit that ensures good cross-modulation performance during automatic gain control and stable DC operation.

Applications

• Gain controlled low noise VHF amplifiers
• Gain controlled low noise UHF amplifiers
• 5 V digital television tuner applications
• Analog television tuner applications

Procurement Notes

Verify the specific ordering suffix matches the required package variant, as the BF1212R denotes the SOT143R reverse pinning configuration. Confirm the marking code corresponds to LKp for accurate identification upon receipt. Ensure handling procedures account for anti-static packaging requirements to prevent electrostatic discharge damage during transport and assembly processes.

Selection Notes

Select this component when designing circuits requiring a dual-gate MOS-FET with integrated surge protection and self-biasing capabilities. The SOT143R package is suitable for surface-mounted applications needing reverse pinning compatibility. Evaluate the thermal resistance from junction to soldering point, which is 185 K/W, to ensure adequate heat dissipation within the specified power limits under operating conditions.

Part Context

This part belongs to the BF1212 series of N-channel dual-gate MOS-FETs manufactured by NXP Semiconductors. The series includes variants such as the BF1212 in SOT143B and the BF1212WR in SOT343R packages. These devices are engineered for RF applications, offering consistent performance characteristics across the family while differing primarily in physical package dimensions and pin configurations.

Replacement Considerations

Direct substitutes within the same product specification include the BF1212 (SOT143B) and BF1212WR (SOT343R). Verify pinout compatibility, as the BF1212R utilizes reverse pinning compared to the standard BF1212. Ensure the replacement package fits the existing footprint or adjust the PCB layout accordingly if switching between SOT143B and SOT143R versions.