BF1212WR,115

Overview

The BF1212WR,115 is an N-channel dual-gate MOS-FET from NXP Semiconductors. It features a short channel design with high forward transfer admittance to input capacitance ratio. The device includes integrated diodes between gates and source for surge protection. Key electrical parameters include a drain-source voltage of 6 V, drain current of 30 mA, and total power dissipation of 180 mW. Forward transfer admittance ranges from 28 to 43 mS. Input capacitance at gate 1 is typically 1.7 pF. Noise figure is 1.1 dB at 800 MHz. Cross-modulation input level is 104 dBμV at 40 dB AGC.

Feature Summary

• Short channel transistor structure providing high forward transfer admittance relative to input capacitance.
• Integrated gate-to-source diodes protect against excessive input voltage surges.
• Partly internal self-biasing circuit ensures good cross-modulation performance during automatic gain control.
• Excellent low frequency noise performance suitable for sensitive amplification applications.

Applications

• Gain controlled low noise VHF amplifiers
• Gain controlled low noise UHF amplifiers
• 5 V digital television tuner applications
• Analog television tuner applications

Procurement Notes

Verify the specific suffix 115 corresponds to the required tape and reel packaging configuration as defined in the official NXP ordering information. Confirm that the SOT343R package variant matches the intended PCB footprint and pinout requirements for the design. Ensure compliance with RoHS directives applicable to the manufacturing date code. Check for any obsolescence notices or lifecycle status updates directly from NXP Semiconductors before finalizing procurement plans.

Selection Notes

Select this component when designing low noise amplifiers requiring dual-gate control for VHF and UHF bands. The device is optimized for 5 V supply operation in television tuner circuits. Consider the SOT343R package dimensions for space-constrained layouts. Evaluate the thermal resistance characteristics if operating near maximum power dissipation limits. Verify that the noise figure specifications meet the system sensitivity requirements at the target operating frequencies.

Part Context

This part belongs to the BF1212 family of N-channel dual-gate MOS-FETs manufactured by NXP Semiconductors. The BF1212WR variant specifically utilizes the SOT343R plastic surface-mounted package with reverse pinning. It shares functional similarities with the BF1212 and BF1212R but differs in physical encapsulation and lead arrangement. These devices are designed for RF amplification roles where low noise and gain control are critical.

Replacement Considerations

BF1212 and BF1212R are functionally similar parts within the same family but utilize different packages (SOT143B and SOT143R respectively). Direct replacement requires verifying package compatibility and pinout alignment due to the reverse pinning differences in the WR variant. No other direct substitutes are documented in the provided datasheet.

FAQ

What is the purpose of the integrated diodes in the BF1212WR?

The integrated diodes between the gates and source protect the device against excessive input voltage surges.

How does the internal self-biasing circuit benefit the BF1212WR?

It ensures good cross-modulation performance during automatic gain control (AGC) and provides good DC stabilization.

What package type is used for the BF1212WR variant?

The BF1212WR is encapsulated in the SOT343R plastic surface-mounted package with reverse pinning.