BF1214,115

Overview

The BF1214 is a dual N-channel dual gate MOSFET amplifier housed in a SOT363 package. It integrates two amplifiers with shared source and gate2 leads, featuring internal bias circuits for DC stabilization and integrated protection diodes between gates and source. The device supports a drain-source voltage of 6 V and a continuous drain current of 30 mA per amplifier. Operating at frequencies up to 1 GHz, it delivers forward transfer admittance of 32 mS at 100 MHz and transducer power gain ranging from 22 dB to 39 dB across the VHF/UHF spectrum.

Feature Summary

• Integrates two low noise gain controlled amplifiers within a single micro-miniature plastic package
• Provides superior cross modulation performance during automatic gain control operations
• Features high forward transfer admittance and an optimized admittance-to-capacitance ratio
• Includes internal bias circuits for DC stabilization and integrated input voltage surge protection

Applications

• Gain controlled low noise amplifiers for VHF and UHF applications
• Digital and analog television tuners
• Professional communication equipment

Procurement Notes

Verify component authenticity through official manufacturer channels or authorized distributors. Confirm the specific ordering suffix matches the required manufacturing origin. Ensure handling procedures account for ElectroStatic Discharge sensitivity as specified in the product data sheet. Validate that the SOT363 package dimensions align with the target PCB layout requirements before finalizing procurement.

Selection Notes

Select this component for designs requiring dual independent amplification with shared control lines in a compact form factor. The device is suitable for applications demanding high linearity and low noise figures in the VHF and UHF bands. Consider the 6 V maximum drain-source voltage and 180 mW total power dissipation limits when designing thermal management solutions. Ensure the circuit design accommodates the specific pin configuration for Gate1, Gate2, and Drain connections.

Part Context

This component belongs to the NXP Semiconductors portfolio of RF discrete devices. It is specifically engineered as a dual MOSFET solution for radio frequency signal processing. The integration of two amplifiers into one package reduces board space compared to using separate single-transistor units. It serves as a specialized active component for frequency conversion and signal conditioning stages in broadcast and communication hardware.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.