BF1215,115

BF1215,115

$0.69
  • Description:RF MOSFET 5V 6TSSOP
  • Series:-

SKU:437a2cf340eb Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:RF MOSFET 5V 6TSSOP
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Frequency:400MHz
  • Gain:30dB
  • Voltage - Test:5 V
  • Current Rating (Amps):30mA
  • Noise Figure:1.5dB
  • Current - Test:19 mA
  • Power - Output:-
  • Voltage - Rated:6 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:6-TSSOP
  • Configuration:N-Channel Dual Gate

Download product information

BF1215,115

Overview

The BF1215,115 is a dual N-channel dual gate MOSFET in a SOT363 package. It integrates two amplifiers with shared source and gate2 leads. Key parameters include a drain-source voltage of 6 V and drain current of 30 mA. Forward transfer admittance is 27 mS at 100 MHz. Noise figures are 1.5 dB at 400 MHz and 1.9 dB at 800 MHz. Transducer power gain reaches 34 dB at 400 MHz. Cross modulation input level is 107 dBμV at 40 dB AGC.

Feature Summary

  • Combines two low noise gain controlled amplifiers in a single package
  • Features superior cross modulation performance during automatic gain control
  • Includes an integrated switch to reduce external component count
  • Optimized for VHF and UHF applications

Applications

  • Gain controlled low noise amplifiers for VHF and UHF applications with a 5 V supply
  • Digital and analog television tuners
  • Professional communication equipment

Procurement Notes

Verify the specific ordering suffix matches the required configuration. Confirm the package type is SOT363 plastic surface-mounted. Check the revision history for any updates to the product data sheet. Ensure ESD precautions are followed during handling. Validate compatibility with the intended VHF/UHF circuit design requirements.

Selection Notes

Select this component for designs requiring dual amplification in a compact form factor. The shared source and gate2 leads simplify circuit topology. Consider the 6 V drain-source voltage limit for power supply selection. Evaluate the noise figure specifications against system sensitivity requirements. Assess the thermal resistance characteristics for heat dissipation needs.

Part Context

This device belongs to the discrete semiconductor category, specifically dual gate MOSFETs. It serves as a specialized active component for radio frequency signal processing. The integration of two amplifiers allows for complex signal conditioning within a minimal footprint. It supports high-frequency operations typical in broadcast and communication hardware.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

FAQ

What is the maximum drain-source voltage for the BF1215?

The maximum DC drain-source voltage is 6 V.

How many leads does the SOT363 package have?

The SOT363 package has six leads.

What is the typical noise figure at 400 MHz?

The typical noise figure at 400 MHz is 1.5 dB.

BF1215,115BF1215,115
$0.69
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