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The BF1215,115 is a dual N-channel dual gate MOSFET in a SOT363 package. It integrates two amplifiers with shared source and gate2 leads. Key parameters include a drain-source voltage of 6 V and drain current of 30 mA. Forward transfer admittance is 27 mS at 100 MHz. Noise figures are 1.5 dB at 400 MHz and 1.9 dB at 800 MHz. Transducer power gain reaches 34 dB at 400 MHz. Cross modulation input level is 107 dBμV at 40 dB AGC.
Verify the specific ordering suffix matches the required configuration. Confirm the package type is SOT363 plastic surface-mounted. Check the revision history for any updates to the product data sheet. Ensure ESD precautions are followed during handling. Validate compatibility with the intended VHF/UHF circuit design requirements.
Select this component for designs requiring dual amplification in a compact form factor. The shared source and gate2 leads simplify circuit topology. Consider the 6 V drain-source voltage limit for power supply selection. Evaluate the noise figure specifications against system sensitivity requirements. Assess the thermal resistance characteristics for heat dissipation needs.
This device belongs to the discrete semiconductor category, specifically dual gate MOSFETs. It serves as a specialized active component for radio frequency signal processing. The integration of two amplifiers allows for complex signal conditioning within a minimal footprint. It supports high-frequency operations typical in broadcast and communication hardware.
No public confirmed substitute part numbers are available in the provided documentation.
The maximum DC drain-source voltage is 6 V.
The SOT363 package has six leads.
The typical noise figure at 400 MHz is 1.5 dB.