BF1217WR,115

Overview

The BF1217WR is an enhancement type N-channel dual gate MOSFET with source and substrate interconnected, housed in the SOT343R plastic package. It features integrated diodes between gates and source to protect against excessive input voltage surges. Key electrical parameters include a drain-source voltage of 6 V, a drain current of 30 mA, and total power dissipation of 180 mW at a solder point temperature up to 107 °C. The forward transfer admittance is typically 27 mS at 100 MHz. Input capacitance at gate 1 is 2.5 pF, while reverse transfer capacitance is 20 fF. Noise figure values are 1.0 dB at 400 MHz and 1.5 dB at 800 MHz.

Feature Summary

• Excellent low frequency noise performance
• Superior cross modulation performance during automatic gain control
• High forward transfer admittance
• High forward transfer admittance to input capacitance ratio

Applications

• Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply voltage
• Digital and analog television tuners
• Professional communication equipment

Procurement Notes

Verify component authenticity through authorized NXP Semiconductors channels or certified distributors. Confirm the specific ordering suffix matches required manufacturing origin markings. Ensure handling procedures account for electrostatic discharge sensitivity during transport and assembly. Validate that the SOT343R package orientation aligns with design footprint requirements before integration into production systems.

Selection Notes

Select this device for designs requiring high linearity and low noise in VHF/UHF bands. The dual gate structure facilitates effective automatic gain control implementation. Verify thermal management capabilities meet system constraints given the 180 mW dissipation limit. Ensure biasing circuits accommodate the specified gate threshold voltages and current limits for stable operation across the intended temperature range.

Part Context

This component belongs to the N-channel dual gate MOSFET family designed for RF amplifier stages. It utilizes silicon technology within a compact surface-mount package. The device supports applications demanding precise signal amplification with minimal distortion. Its architecture allows for independent gate control, optimizing performance in tuner and communication front-end modules.

Replacement Considerations

No public confirmed substitute part numbers are documented for this discontinued item.

FAQ

What is the function of the integrated diodes?

Integrated diodes between gates and source protect against excessive input voltage surges.

How does the dual gate structure benefit AGC applications?

It provides superior cross modulation performance during automatic gain control operations.

What is the maximum drain-source voltage rating?

The maximum DC drain-source voltage is 6 V.