BF2040WE6814HTSA1

Overview

The BF2040WE6814HTSA1 is a silicon N-channel MOSFET tetrode manufactured by Infineon Technologies, designed for low noise and high gain applications in controlled input stages up to 1 GHz. It operates at a voltage of 5 V and features an SOT343 surface-mount package. Key electrical parameters include a drain-source voltage rating of 8 V, a continuous drain current of 40 mA, and a total power dissipation of 200 mW. At 800 MHz with VDS = 5 V and ID = 15 mA, it provides a typical power gain of 23 dB and a noise figure of 1.6 dB. The device includes two gates (G1 external biasing, G2 internal) and supports a gain control range of approximately 50 dB.

Feature Summary

• Tetrode configuration with separate Gate 1 for external biasing and Gate 2 for internal operation, enabling precise gain control and low noise performance.
• Qualified according to AEC Q101 standards, ensuring reliability for automotive and industrial environments.
• Designed for high gain and low noise operation in RF input stages up to 1 GHz frequency range.
• Pb-free packaging compliant with RoHS directives.

Applications

• Low noise, high gain controlled input stages for RF systems operating up to 1 GHz.
• Automotive radio receiver front-ends requiring AEC Q101 qualified components.
• RF amplification circuits where variable gain control via Gate 1 is required.

Procurement Notes

Verify the specific ordering suffix 'WE6814' against official Infineon documentation to confirm tape-and-reel quantity and marking details. Confirm component availability status as some BF2040 variants may be discontinued or subject to last-time buy notices. Ensure handling precautions for ESD-sensitive devices are followed during storage and assembly.

Selection Notes

Select this component when a low-noise, high-gain RF MOSFET tetrode is required for frequencies up to 1 GHz. The SOT343 package is suitable for space-constrained surface-mount designs. Consider the 5 V operating voltage and 40 mA current limit for circuit design. Verify thermal resistance requirements, as power dissipation decreases significantly above 76 °C case temperature.

Part Context

The BF2040 series comprises silicon N-channel MOSFET tetrodes available in SOT143, SOT143R, and SOT343 packages. The BF2040W variant specifically utilizes the SOT343 footprint. These devices share core electrical characteristics but differ in physical dimensions and thermal properties based on the package type. The series is optimized for RF applications requiring stable gain and low noise figures.

Replacement Considerations

Direct pin-compatible replacements within the same package family include BF2040RE6814HTSA1 (SOT143R) and BF2040E6814HTSA1 (SOT143), provided the PCB layout accommodates the respective package dimensions. Cross-package substitution requires careful review of thermal resistance and pinout configurations, as pin assignments for Drain and Source differ between SOT143 and SOT343 packages.

FAQ

What is the difference between Gate 1 and Gate 2 in the BF2040?

Gate 2 is internally connected for standard operation, while Gate 1 allows for external biasing. This dual-gate structure enables variable gain control by adjusting the voltage or current applied to Gate 1, making it suitable for automatic gain control (AGC) applications.

How does case temperature affect power dissipation?

Total power dissipation is dependent on the case temperature (TS). For the BF2040W (SOT343), the maximum power dissipation is 200 mW when TS ≤ 94 °C. Above this temperature, the allowable power dissipation must be derated linearly to prevent overheating.

Is the BF2040WE6814HTSA1 suitable for high-frequency switching?

No, the BF2040 is designed for RF amplification and low-noise applications up to 1 GHz, not for high-speed digital switching. Its parameters, such as gate capacitance and transconductance, are optimized for analog RF signal processing rather than fast switching transitions.