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The BF2040WH6814XTSA1 is a silicon N-channel MOSFET tetrode in the SOT343 surface-mount package. It operates at a drain-source voltage of 8 V with a continuous drain current of 40 mA and total power dissipation of 200 mW. The device provides a typical power gain of 23 dB and a noise figure of 1.6 dB at 800 MHz, supporting frequencies up to 1 GHz. It features a gate1-source breakdown voltage of 6 V and a gate threshold voltage range of 0.3 V to 0.7 V.
Verify component authenticity through authorized Infineon channels or certified distributors. Confirm the specific suffix matches the required SOT343 package variant. Check for RoHS compliance status and ensure handling precautions are followed due to ESD sensitivity. Validate that the part meets the intended thermal and electrical requirements for the target application.
Select this component when designing RF stages requiring high gain and low noise figures around 800 MHz. Ensure the design accommodates the 8 V maximum drain-source voltage and 40 mA current limits. Consider the SOT343 package dimensions for PCB layout. Verify thermal management capabilities given the 200 mW power dissipation rating.
This part belongs to the BF2040 family of silicon N-channel MOSFET tetrodes from Infineon Technologies. Other variants include BF2040 in SOT143 and BF2040R in SOT143R packages. All share similar electrical characteristics but differ in physical footprint and thermal resistance specifications.
Direct replacements must match the SOT343 package and tetrode configuration. Verify equivalent RF performance metrics including gain and noise figure at 800 MHz. Cross-reference pin configurations as SOT343 pinouts may differ from other packages in the same family.