BF244A_J35Z

Overview

The onsemi BF244A_J35Z is an N-channel depletion-mode Junction Field-Effect Transistor (JFET) designed for radio frequency applications. It operates in the Ultra High Frequency band with a maximum drain-source voltage of 30 V and a continuous drain current of 100 mA. The device features a TO-92-3 through-hole package and supports a junction temperature up to 150°C. It is engineered for RF amplifier and mixer circuits operating up to 450 MHz, as well as analog switching tasks requiring low capacitance.

Feature Summary

• Optimized for RF amplifier and mixer applications in the UHF band
• Designed for analog switching requiring low capacitance
• N-channel depletion mode operation

Applications

• RF amplifier circuits
• Mixer applications
• Analog switching

Procurement Notes

Verify component authenticity upon receipt. Confirm that the part number suffix matches the specific ordering requirements. Check for physical damage to the leads and casing before integration into the circuit design.

Selection Notes

Select this component for designs requiring N-channel JFETs in the UHF range. Ensure the circuit voltage does not exceed the 30 V breakdown rating. Verify thermal management capabilities for the TO-92 package under expected load conditions.

Part Context

This component belongs to the BF244 series of RF JFETs. It shares functional similarities with other N-channel depletion devices like the BF244B and BF245A, which are also used in VHF/UHF amplification roles within similar package constraints.

Replacement Considerations

Publicly confirmed parameter-equivalent substitutes include the BF244B from Fairchild Semiconductor or onsemi. Other compatible N-channel RF JFETs such as the 2N3819 may serve as functional alternatives depending on specific gain and capacitance requirements.