BF244B_J35Z

BF244B_J35Z

$0.06
  • Description:RF MOSFET JFET 15V TO92-3
  • Series:-

SKU:e1d52ab112c0 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET JFET 15V TO92-3
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Technology:JFET
  • Frequency:100MHz
  • Gain:-
  • Voltage - Test:15 V
  • Current Rating (Amps):50mA
  • Noise Figure:1.5dB
  • Current - Test:-
  • Power - Output:-
  • Voltage - Rated:30 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Supplier Device Package:TO-92-3
  • Configuration:N-Channel

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BF244B_J35Z

Overview

The BF244B_J35Z is an N-channel silicon RF JFET transistor manufactured by onsemi. It features a TO-92-3 through-hole package and operates within a temperature range of -55°C to +150°C. Key electrical specifications include a drain-source breakdown voltage (Vds) of 30 V, a gate-source breakdown voltage (Vgs) of 30 V, and a continuous drain current (Id) of 15 mA. The device has a maximum power dissipation (Pd) of 350 mW and a gate-source cutoff voltage ranging from -500 mV to -8 V.

Feature Summary

  • Designed for radio frequency applications utilizing N-channel junction field-effect technology
  • Constructed with silicon material for robust semiconductor performance
  • Configured as a single-transistor component in a standard through-hole form factor

Applications

  • RF amplifier circuits
  • UHF band signal processing
  • Small-signal RF switching

Procurement Notes

Verify the exact part number nomenclature upon ordering, as Fairchild Semiconductor integration into ON Semiconductor may require replacing underscores with dashes in system records. Confirm RoHS compliance status directly with the supplier or manufacturer documentation, as listed details indicate variable reporting. Ensure the specific suffix matches the required manufacturing batch and packaging configuration before finalizing procurement contracts.

Selection Notes

Select this component when an N-channel RF JFET with a 30 V breakdown rating and TO-92-3 mounting is required. Consider the 15 mA continuous drain current limit and 350 mW power dissipation capability during thermal design. Verify that the gate-source cutoff voltage range aligns with the biasing requirements of the target RF circuit topology.

Part Context

This device belongs to the RF JFET transistor category produced by onsemi. It is related to other models in the BF244 series, such as the BF244A, which share similar structural characteristics but may differ in specific gain or capacitance parameters. The product line serves the broader discrete semiconductor market for analog and RF signal handling.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source data. Cross-reference with the BF244A if parameter variations are acceptable, subject to official datasheet verification.

BF244B_J35ZBF244B_J35Z
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