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The BF244B_J35Z is an N-channel silicon RF JFET transistor manufactured by onsemi. It features a TO-92-3 through-hole package and operates within a temperature range of -55°C to +150°C. Key electrical specifications include a drain-source breakdown voltage (Vds) of 30 V, a gate-source breakdown voltage (Vgs) of 30 V, and a continuous drain current (Id) of 15 mA. The device has a maximum power dissipation (Pd) of 350 mW and a gate-source cutoff voltage ranging from -500 mV to -8 V.
Verify the exact part number nomenclature upon ordering, as Fairchild Semiconductor integration into ON Semiconductor may require replacing underscores with dashes in system records. Confirm RoHS compliance status directly with the supplier or manufacturer documentation, as listed details indicate variable reporting. Ensure the specific suffix matches the required manufacturing batch and packaging configuration before finalizing procurement contracts.
Select this component when an N-channel RF JFET with a 30 V breakdown rating and TO-92-3 mounting is required. Consider the 15 mA continuous drain current limit and 350 mW power dissipation capability during thermal design. Verify that the gate-source cutoff voltage range aligns with the biasing requirements of the target RF circuit topology.
This device belongs to the RF JFET transistor category produced by onsemi. It is related to other models in the BF244 series, such as the BF244A, which share similar structural characteristics but may differ in specific gain or capacitance parameters. The product line serves the broader discrete semiconductor market for analog and RF signal handling.
Publicly confirmed substitute part numbers are not available in the provided source data. Cross-reference with the BF244A if parameter variations are acceptable, subject to official datasheet verification.