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The BF245A_J35Z is an N-channel silicon Junction Field-Effect Transistor (JFET) designed for VHF and UHF amplifier applications. It operates in depletion mode within a TO-92-3 through-hole package. Key electrical ratings include a drain-source voltage of 30 V, a gate-source voltage of 30 V, and a continuous drain current of 15 mA. The device supports a maximum power dissipation of 350 mW at 25°C, with a derating factor of 2.8 mW/°C above this temperature. The operational temperature range extends from -55°C to +150°C.
Verify the specific suffix _J35Z against the manufacturer's official datasheet to confirm pinout and packaging compliance. Note that availability may be restricted or limited depending on regional distributor inventory status. Ensure the component meets required RoHS directives if applicable to the target assembly process.
Select this component for designs requiring an N-channel depletion-mode FET in a standard TO-92 package. Confirm that the 30 V breakdown voltage and 15 mA current limits align with the circuit's operating conditions. Consider the thermal derating requirements when calculating power dissipation in enclosed environments.
This part belongs to the family of N-channel silicon JFETs intended for radio frequency applications. It shares functional similarities with other VHF/UHF amplifiers like the BF244B and BF245A variants, offering comparable electrical characteristics for small-signal RF handling in discrete transistor configurations.
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with generic N-channel JFETs only after confirming exact parameter matching.