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The BF245B_D27Z is an N-channel depletion-mode Junction Field-Effect Transistor (JFET) manufactured by onsemi. Designed for VHF and UHF amplifier applications, it operates within a TO-92-3 (TO-226AA) through-hole package. The device features a maximum drain-source voltage of 30 V and a continuous drain current rating of 100 mA. It supports a total device dissipation of 350 mW at 25°C ambient temperature, with a storage temperature range spanning from -65°C to +150°C. The component utilizes silicon technology and is classified under the base product number BF245.
Verify the specific suffix D27Z against official manufacturer documentation to confirm packaging details, as standard listings may vary between tape-and-reel or bulk formats. Confirm RoHS compliance status and environmental classifications directly with onsemi, as legacy JFETs may have varying regulatory attributes depending on production batch and date code.
Select this component when designing low-noise, high-frequency amplifier stages requiring N-channel depletion characteristics. Ensure the circuit design accommodates the 30 V breakdown limit and 350 mW thermal dissipation constraints. Verify that the TO-92-3 form factor fits the mechanical layout requirements compared to surface-mount alternatives.
This part belongs to the BF245 family of JFETs, which includes variants such as BF245A, BF245C, and BF245B. These devices are historically used in radio frequency applications. The BF245B variant typically offers specific gain-bandwidth characteristics distinct from the A and C grades within the same series.
Direct substitutes include the BF245A and BF245C from onsemi, provided their specific electrical parameters meet the design requirements. Other manufacturers produce equivalent N-channel JFETs, but pinout and parameter verification is essential.