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The BF245B_J35Z is an N-channel silicon RF JFET transistor manufactured by onsemi. It operates with a drain-source voltage rating of 30 V and a gate-source breakdown voltage of -30 V. The device supports a continuous drain current of 15 mA and handles up to 100 mA forward gate current. Total device dissipation is rated at 350 mW at 25°C ambient temperature, with a derating factor of 2.8 mW/°C above this threshold. The component functions in depletion mode and is housed in a TO-92-3 (TO-226AA) through-hole package with formed leads.
This product is officially classified as obsolete and is no longer manufactured by onsemi. Verification of availability requires checking distributor inventories for remaining stock or identifying parameter-equivalent alternatives. Sourcing should prioritize verified replacement components that match the original electrical specifications and package dimensions to ensure circuit compatibility.
Selection requires confirming the necessity of N-channel JFET topology for the specific RF application. Designers must verify that the 30 V voltage ratings and 15 mA current limits align with system requirements. Since the part is obsolete, evaluating equivalent replacements from other manufacturers is necessary to maintain supply chain stability for production runs.
The BF245B series belongs to onsemi's lineup of N-channel RF JFET transistors intended for VHF and UHF applications. This specific variant utilizes the TO-92-3 package, a common form factor for through-hole mounting in discrete semiconductor designs. The component represents a legacy silicon-based solution for analog RF signal handling before more modern integrated approaches became prevalent.
Public confirmed substitute part numbers are not explicitly listed in the provided documentation for this specific obsolete item. Engineers should consult manufacturer cross-reference guides for parameter-equivalent N-channel RF JFETs in TO-92 packages.