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Product Detailed Parameters
- Description：JFET N-CH 25V TO92-3
- Series：-
- Mfr：onsemi
- Package：Bulk
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：25 V
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：60 mA @ 15 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：600 mV @ 10 nA
- Input Capacitance (Ciss) (Max) @ Vds：-
- Resistance - RDS(On)：-
- Power - Max：625 mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
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Overview
The BF246B is an N-channel junction field-effect transistor (JFET) switch designed for low-level analog signal routing. It features a Drain-Gate Voltage rating of 25 V and a Gate-Source Breakdown Voltage of -25 V. The device supports a Zero-Gate Voltage Drain Current ranging from 60 mA to 140 mA at 15 V. Thermal performance includes a total device dissipation of 625 mW and a thermal resistance from junction to ambient of 357 °C/W. It operates within a temperature range of -55°C to +150°C.
Feature Summary
- Engineered specifically for low-level analog switching applications requiring precise signal control.
- Suitable for integration into sample and hold circuits where minimal leakage and stable cutoff are required.
- Capable of supporting chopper-stabilized amplifier architectures due to its specific electrical characteristics.
Applications
- Low-level analog signal switching
- Sample and hold circuits
- Chopper-stabilized amplifiers
Procurement Notes
Verify the current manufacturing status, as the component was originally produced by Fairchild Semiconductor prior to its acquisition by onsemi. Confirm that the TO-92 package availability aligns with current supply chain capabilities. Ensure the datasheet revision matches the specific production lot requirements for your design implementation.
Selection Notes
Select this component when designing circuits that require an N-channel JFET for analog signal path management. Evaluate the -25 V gate-source breakdown voltage against your control logic levels. Consider the 625 mW power dissipation limit and the 357 °C/W thermal resistance for proper heat management in enclosed environments.
Part Context
The BF246B belongs to the family of N-channel silicon junction field-effect transistors. It is sourced from process 51 and shares characteristic similarities with the J111 device. Originally manufactured by Fairchild Semiconductor, the product line continues under the onsemi brand following the corporate acquisition.
Replacement Considerations
Consult the J111 datasheet for comparable electrical characteristics. Verify pinout compatibility for the TO-92 package before substitution. Cross-reference specific drain current and breakdown voltage tolerances to ensure circuit integrity is maintained during replacement.
