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The BF256B is an N-channel RF amplifier JFET designed for VHF/UHF applications. It operates with a Drain-Gate Voltage of 30V and a Gate-Source Voltage of -30V. The device features a Zero-Gate Voltage Drain Current (IDSS) ranging from 6mA to 13mA at VDS=15V. Common Source Forward Transconductance (gfs) is specified between 4.5 mmhos at 1kHz. Gate-Source Cut-Off Voltage (VGS(off)) ranges from -0.5V to -8.0V. Total Device Dissipation is 350mW at 25°C, derating by 2.8mW/°C above this temperature. Operating and Storage Temperature Range spans from -55°C to 150°C.
Verify part authenticity through authorized distributors or direct manufacturer channels due to counterfeiting risks in the semiconductor industry. Confirm package type matches TO-92 3L Bulk specifications. Check datasheet revision status as Fairchild Semiconductor products have transitioned to ON Semiconductor systems, potentially affecting ordering nomenclature and documentation availability.
Select based on required IDSS range between 6mA and 13mA for specific gain characteristics. Ensure thermal management accommodates 350mW dissipation limit at 25°C ambient. Verify voltage ratings align with circuit requirements, specifically the 30V Drain-Gate and -30V Gate-Source limits. Consider operating temperature range up to 150°C for high-temperature environments.
The BF256B belongs to the N-Channel RF Amplifier family originally manufactured by Fairchild Semiconductor. Following corporate integration, it is now managed under ON Semiconductor's portfolio. The component utilizes a standard TO-92 three-lead package configuration suitable for through-hole mounting in various electronic assemblies requiring RF signal amplification capabilities.
MMBF5485 is listed as a similar alternative part number available from ON Semiconductor.