BF513,215

BF513,215

  • Description:RF MOSFET JFET 10V SOT23
  • Series:-

SKU:b681a379d76c Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET JFET 10V SOT23
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:JFET
  • Frequency:100MHz
  • Gain:-
  • Voltage - Test:10 V
  • Current Rating (Amps):30mA
  • Noise Figure:1.5dB
  • Current - Test:5 mA
  • Power - Output:-
  • Voltage - Rated:20 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23 (TO-236AB)
  • Configuration:N-Channel

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BF513,215

Overview

The BF513,215 is an asymmetrical N-channel silicon field-effect transistor manufactured by NXP Semiconductors. It is housed in a miniature plastic envelope designed for high-frequency applications up to the VHF range within hybrid thick and thin-film circuits. The device is characterized by low feedback capacitance and a low noise figure, making it suitable for RF stages in portable FM radios, car radios, mains radios, or mixer stages.

Feature Summary

  • Asymmetrical N-channel planar epitaxial junction field-effect transistor
  • Low feedback capacitance for high-frequency stability
  • Low noise figure for sensitive signal processing
  • Miniature plastic envelope for compact circuit integration

Applications

  • RF stages in FM portable radios
  • Mixer stages in radio receivers
  • Hybrid thick and thin-film circuits operating in the VHF range

Procurement Notes

Verify the specific ordering code BF513,215 against official NXP documentation to ensure correct package and tape-and-reel specifications. Confirm RoHS compliance status and lead times directly with authorized distributors or NXP sales representatives prior to procurement.

Selection Notes

Select this component when designing VHF stage circuits requiring minimal feedback capacitance and low noise performance. Ensure the design accommodates the miniature plastic envelope dimensions and thermal characteristics specified in the official datasheet for hybrid circuit integration.

Part Context

This part belongs to NXP's portfolio of N-channel silicon field-effect transistors intended for RF applications. It complements other devices like the BF510, BF511, and BF512, which serve similar roles in various radio receiver architectures but may differ in specific electrical parameters or packaging requirements.

Replacement Considerations

Check for direct pin-compatible alternatives such as the BF510, BF511, or BF512 if system requirements allow. Verify that any substitute maintains the required VHF operation range, noise figure, and feedback capacitance levels to ensure circuit compatibility.

BF513,215BF513,215

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