BF861A,215

$0.53

Description：RF MOSFET JFET 25V SOT23
Series：-

SKU:125953191aba Category: RF FETs, MOSFETs Brand: NXP USA Inc.

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Product introduction

Product Detailed Parameters

Description：RF MOSFET JFET 25V SOT23
Series：-
Mfr：NXP USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：JFET
Frequency：-
Gain：-
Voltage - Test：-
Current Rating (Amps)：6.5mA
Noise Figure：-
Current - Test：-
Power - Output：-
Voltage - Rated：25 V
Grade：-
Qualification：-
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Supplier Device Package：SOT-23 (TO-236AB)
Configuration：N-Channel

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BF861A,215

Overview

The BF861A,215 is an N-channel symmetrical junction field effect transistor manufactured by NXP Semiconductors. It is housed in a SOT23 plastic surface-mounted package with three leads. Key electrical parameters include a drain-source voltage of 25 V and a total power dissipation of 250 mW at 25 °C ambient temperature. The device exhibits a forward transfer admittance range of 12 to 20 mS and a typical drain current of 6.5 mA under specified conditions.

Feature Summary

High transfer admittance for efficient signal processing
Low feedback capacitance minimizing signal distortion
Low input capacitance reducing loading effects
Low noise characteristics suitable for sensitive amplification

Applications

Preamplifiers for AM tuners in car radios

Procurement Notes

Verify the component authenticity against official NXP documentation before integration. Confirm that the specific ordering suffix matches the required package variant. Ensure static discharge protection protocols are followed during handling, as the gate-source input is sensitive to electrostatic damage. Cross-reference the marking code on the physical device with the datasheet specifications to validate the part number.

Selection Notes

Select this component when designing low-noise preamplifier circuits requiring high transfer admittance. The SOT23 package facilitates compact surface-mount assembly. Consider the specific drain current and admittance ranges relative to the BF861B and BF861C variants if different performance thresholds are needed. Ensure the application environment stays within the specified thermal and voltage limiting values.

Part Context

This device belongs to the BF861 series of N-channel junction FETs produced by NXP Semiconductors. The series includes BF861A, BF861B, and BF861C variants, differentiated primarily by their drain current and forward transfer admittance specifications. All variants share the same SOT23 package and general structural characteristics.