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Product Detailed Parameters
- Description：RF MOSFET JFET SOT23
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：JFET
- Frequency：-
- Gain：-
- Voltage - Test：-
- Current Rating (Amps)：25mA
- Noise Figure：-
- Current - Test：-
- Power - Output：-
- Voltage - Rated：25 V
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23 (TO-236AB)
- Configuration：N-Channel
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Overview
The BF861C,215 is an N-channel symmetrical junction field effect transistor manufactured by NXP Semiconductors. It is housed in a SOT23 plastic surface-mounted package with three leads. The device features a drain-source voltage rating of 25 V and a total power dissipation of 250 mW at 25 °C ambient temperature. For the BF861C variant, the drain current (IDSS) ranges from 12 mA to 25 mA at VGS = 0 V and VDS = 8 V. The forward transfer admittance (|yfs|) is specified between 20 mS and 30 mS under the same conditions.
Feature Summary
- High transfer admittance for efficient signal processing
- Low input capacitance suitable for high-frequency applications
- Low feedback capacitance enhancing stability
- Low noise performance ideal for sensitive amplification
Applications
- Preamplifiers for AM tuners in car radios
Procurement Notes
Verify the component authenticity against official NXP documentation before integration. Confirm that the specific ordering suffix matches the required package and marking code. Ensure static discharge protection protocols are followed during handling, as the gate-source input is sensitive to electrostatic damage. Cross-reference the revision history to ensure compatibility with current design specifications.
Selection Notes
Select the BF861C when a higher drain current range of 12 mA to 25 mA is required compared to the BF861A or BF861B variants. This model is appropriate for designs prioritizing low noise and high transfer admittance within a compact SOT23 footprint. Ensure the application operates within the 25 V drain-source voltage limit and respects the thermal resistance constraints for reliable long-term operation.
Part Context
This component belongs to the BF861 family of N-channel junction FETs produced by NXP Semiconductors. The family includes BF861A, BF861B, and BF861C, which share identical pinouts and package types but differ in electrical characteristics such as drain current and forward transfer admittance. The BF861C represents the highest current and admittance option within this specific series.
Replacement Considerations
BF861A,215
FAQ
What is the maximum drain-source voltage for the BF861C?
The maximum drain-source voltage (VDS) for the BF861C is 25 V.
How does the BF861C differ from the BF861B?
The BF861C has a higher drain current range (12-25 mA vs 6-15 mA) and a higher forward transfer admittance range (20-30 mS vs 16-25 mS) compared to the BF861B.
Is the BF861C automotive qualified?
No, unless explicitly stated otherwise in specific product data sheets, this product is not automotive qualified and should not be used in automotive equipment without customer risk assessment.
