BF904,235

Overview

The BF904,235 is an N-channel dual-gate MOSFET manufactured by NXP Semiconductors. It is housed in a plastic microminiature SOT-143B package and designed for RF applications. The device features a drain-source voltage of 7 V and a maximum drain current of 30 mA. As an enhancement type field-effect transistor, it functions as an amplifier suitable for radio frequency signal processing tasks within electronic circuits.

Feature Summary

• Dual-gate architecture for enhanced RF control
• Optimized for radio frequency amplification
• Compact SOT-143B surface-mount packaging

Applications

• RF signal amplification
• Radio frequency circuit design
• Microwave application modules

Procurement Notes

Verify the specific suffix '235' to confirm reel packaging specifications. Confirm that the component matches the SOT-143B physical dimensions. Ensure compatibility with existing RF circuit designs before integration. Check availability status as manufacturing lifecycle may affect supply continuity.

Selection Notes

Select this component when a dual-gate N-channel configuration is required for RF stages. The 7 V rating limits high-voltage applications. Consider the SOT-143B footprint for PCB layout constraints. Evaluate thermal performance requirements against the 30 mA current limit for the intended operating environment.

Part Context

This part belongs to the BF904 series of RF transistors from NXP Semiconductors. The series includes variants like the BF904R. These components are specialized for high-frequency operations. The BF904,235 represents a specific packaging and taping configuration within this product family.

Replacement Considerations

Check for direct substitutes within the BF904 series. Verify pinout compatibility with SOT-143B packages. Ensure electrical parameters match the original design requirements.