BF904AR,215

Overview

The BF904AR,215 is an N-channel dual-gate MOSFET RF FET manufactured by NXP USA Inc. It operates with a rated voltage of 7 V and a maximum drain current of 30 mA. The device is designed for frequencies up to 200 MHz and features a noise figure of 1 dB at a test condition of 5 V and 10 mA. It utilizes SOT-143R surface-mount packaging.

Feature Summary

• Dual-gate architecture for RF applications
• Low noise performance suitable for signal processing

Applications

• RF mixer circuits
• VHF/UHF frequency conversion stages

Procurement Notes

Verify the specific suffix '215' against official NXP documentation to confirm tape-and-reel specifications and RoHS compliance status. Confirm availability as this component may be discontinued or subject to supply constraints. Ensure the SOT-143R package variant matches the design requirements before procurement.

Selection Notes

Select this component for low-noise RF front-end designs requiring dual-gate isolation. Verify that the 7 V rating and 30 mA current limit align with the circuit's power budget. Ensure the operating frequency remains within the 200 MHz specification for optimal noise figure performance.

Part Context

This part belongs to NXP's portfolio of RF small-signal transistors. It is functionally similar to the BF904AWR but distinguished by its specific packaging and reel configuration. It serves as a discrete solution for analog RF signal handling in communication systems.

Replacement Considerations

The BF904AWR is a documented related part number from NXP. Verify pinout compatibility and electrical parameter equivalence before substitution.