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The BF904R,215 is an N-channel dual gate MOS-FET in a SOT-143R package. It operates with a drain-source voltage of 7 V and a maximum drain current of 30 mA. The device features a forward transfer admittance of 25 mS and an input capacitance at Gate 1 of 2.2 pF. Noise figures are 1 dB at 200 MHz and 2 dB at 800 MHz. Total power dissipation is 200 mW.
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Select this component for RF front-end designs requiring low noise and high linearity. Ensure the operating supply voltage remains within the 3 V to 7 V range. Verify that the required frequency coverage aligns with the specified noise figure and admittance characteristics for optimal signal integrity.
This part belongs to the BF904 series of N-channel dual gate MOS-FETs manufactured by NXP Semiconductors. It utilizes a plastic microminiature SOT-143R surface mount package. The device integrates an amplifier MOS-FET with source and substrate interconnected to support stable operation in radio frequency circuits.
The BF904 is a compatible substitute within the same product family. Verify pin compatibility and electrical specifications against the BF904 datasheet before implementation.
The internal bias circuit ensures good cross-modulation performance during automatic gain control (AGC) operations.
The BF904R uses the SOT-143R package with reverse pinning compared to the standard SOT-143B package used by the BF904.
The typical noise figure is 2 dB when operating at 800 MHz under specified conditions.