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The BF904R,235 is an N-channel dual gate MOS-FET in a SOT-143R package. It operates with a drain-source voltage of 7 V and a drain current of 30 mA. The device features a forward transfer admittance of 25 mS and an input capacitance at gate 1 of 2.2 pF. Reverse transfer capacitance is 25 fF at 1 MHz. Noise figure is 2 dB at 800 MHz. Total power dissipation is 200 mW, with a junction temperature limit of 150 °C.
Verify the component against the official NXP product data sheet Rev. 06. Confirm the marking code matches %MD for the SOT-143R package. Ensure the ordering suffix ,235 corresponds to tape and reel packaging as specified in the manufacturer documentation. Validate that the device meets the required environmental specifications before integration.
Select this component for designs requiring a 5 V supply voltage operation. Consider the specific thermal resistance characteristics when designing heat dissipation strategies. Evaluate the noise figure requirements against the 2 dB specification at 800 MHz. Ensure the application frequency range aligns with the device's RF capabilities.
This part belongs to the BF904 series of enhancement type field-effect transistors. It utilizes a plastic microminiature SOT-143R package. The device integrates an amplifier MOS-FET with source and substrate interconnected. It is manufactured by NXP Semiconductors.
The BF904 variant shares identical electrical characteristics but uses the SOT-143B package. Verify pinout compatibility if substituting between BF904 and BF904R variants due to potential pinning differences.
The marking code for the BF904R is %MD.
The internal bias circuit ensures good cross-modulation performance during automatic gain control (AGC).
The maximum operating junction temperature is 150 °C.