BF904WR,115

BF904WR,115

$0.68
  • Description:RF MOSFET 5V CMPAK-4
  • Series:-

SKU:d0b65f473d4c Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET 5V CMPAK-4
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Frequency:200MHz
  • Gain:-
  • Voltage - Test:5 V
  • Current Rating (Amps):30mA
  • Noise Figure:1dB
  • Current - Test:10 mA
  • Power - Output:-
  • Voltage - Rated:7 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-82A, SOT-343
  • Supplier Device Package:CMPAK-4
  • Configuration:N-Channel Dual Gate

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BF904WR,115

Overview

The BF904WR,115 is an N-channel dual gate MOS-FET manufactured by NXP Semiconductors. It operates in the VHF band and is housed in a CMPAK-4 (SOT-343R) plastic package with four pins. Key electrical parameters include a maximum drain-source voltage of 7 V, a maximum continuous drain current of 30 mA, and a maximum feedback capacitance of 0.035 pF. The device is lead-free and RoHS compliant.

Feature Summary

  • Dual gate architecture for enhanced RF performance
  • Low noise characteristics suitable for sensitive applications
  • VHF band operation capability

Applications

  • RF mixer circuits
  • Low noise amplifier stages
  • VHF frequency conversion systems

Procurement Notes

Verify the specific suffix '115' corresponds to the tape-and-reel packaging format required for automated assembly. Confirm that the CMPAK-4 footprint matches the target PCB layout dimensions. Ensure compliance with RoHS directives if operating in regulated regions. Cross-reference the manufacturer's latest datasheet revision to confirm pinout consistency before finalizing procurement orders.

Selection Notes

Select this component when designing VHF stage circuits requiring low input capacitance and high isolation between gates. The 7 V breakdown voltage limits suitability for high-power RF applications. Consider the SOT-343R package constraints for thermal management in dense layouts. Evaluate the 30 mA current limit against the circuit's biasing requirements to ensure stable operation without exceeding absolute maximum ratings.

Part Context

This component belongs to NXP's portfolio of RF small-signal MOSFETs designed for communication equipment. It serves as a specialized active element for frequency mixing and amplification in consumer electronics and industrial radio systems. The dual-gate structure allows for independent control of gain and isolation, distinguishing it from standard single-gate transistors in RF signal processing chains.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult NXP's official replacement guide or contact technical support directly for validated cross-reference data.

BF904WR,115BF904WR,115
$0.68
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