SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BF904WR,115 is an N-channel dual gate MOS-FET manufactured by NXP Semiconductors. It operates in the VHF band and is housed in a CMPAK-4 (SOT-343R) plastic package with four pins. Key electrical parameters include a maximum drain-source voltage of 7 V, a maximum continuous drain current of 30 mA, and a maximum feedback capacitance of 0.035 pF. The device is lead-free and RoHS compliant.
Verify the specific suffix '115' corresponds to the tape-and-reel packaging format required for automated assembly. Confirm that the CMPAK-4 footprint matches the target PCB layout dimensions. Ensure compliance with RoHS directives if operating in regulated regions. Cross-reference the manufacturer's latest datasheet revision to confirm pinout consistency before finalizing procurement orders.
Select this component when designing VHF stage circuits requiring low input capacitance and high isolation between gates. The 7 V breakdown voltage limits suitability for high-power RF applications. Consider the SOT-343R package constraints for thermal management in dense layouts. Evaluate the 30 mA current limit against the circuit's biasing requirements to ensure stable operation without exceeding absolute maximum ratings.
This component belongs to NXP's portfolio of RF small-signal MOSFETs designed for communication equipment. It serves as a specialized active element for frequency mixing and amplification in consumer electronics and industrial radio systems. The dual-gate structure allows for independent control of gain and isolation, distinguishing it from standard single-gate transistors in RF signal processing chains.
Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult NXP's official replacement guide or contact technical support directly for validated cross-reference data.