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The BF904WR,135 is an N-channel dual-gate MOS-FET manufactured by NXP Semiconductors. It is designed for VHF band applications, functioning primarily as a mixer diode or RF small-signal transistor. The device utilizes silicon technology and features a plastic package with four pins (SOT143R). Key electrical characteristics include a minimum drain-source breakdown voltage of 7 V and a maximum continuous drain current of 0.03 A. It exhibits low noise performance and a maximum feedback capacitance of 0.035 pF. The component operates in the ultra-high frequency band and supports complex configurations suitable for RF signal processing tasks.
Verify the specific suffix '135' against official NXP documentation to confirm tape-and-reel packaging specifications and pinout orientation. Ensure compatibility with SOT143R footprint requirements during PCB layout. Cross-reference datasheet revision dates to validate parameter consistency before finalizing procurement orders.
Select this component for designs requiring dual-gate isolation in VHF applications. Consider the 7 V breakdown voltage limit when sizing power supplies. Evaluate the 0.03 A current rating against load requirements. Verify thermal management needs based on the plastic package type and expected operating ambient temperatures.
This part belongs to the BF904 series of N-channel dual-gate MOS-FETs from NXP Semiconductors. The series is established for RF applications, with variations often differing in packaging or specific electrical tolerances. The BF904WR variant specifically denotes the reel-packaged version intended for automated assembly processes.
Check for BF904AWR or BF904A equivalents if different packaging is required. Verify functional compatibility with BF909 series devices for similar RF roles. Confirm pinout alignment before substituting.