BF904WR,135

BF904WR,135

  • Description:RF MOSFET 5V CMPAK-4
  • Series:-

SKU:0e008c8aef15 Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET 5V CMPAK-4
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Frequency:200MHz
  • Gain:-
  • Voltage - Test:5 V
  • Current Rating (Amps):30mA
  • Noise Figure:1dB
  • Current - Test:10 mA
  • Power - Output:-
  • Voltage - Rated:7 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-82A, SOT-343
  • Supplier Device Package:CMPAK-4
  • Configuration:N-Channel Dual Gate

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BF904WR,135

Overview

The BF904WR,135 is an N-channel dual-gate MOS-FET manufactured by NXP Semiconductors. It is designed for VHF band applications, functioning primarily as a mixer diode or RF small-signal transistor. The device utilizes silicon technology and features a plastic package with four pins (SOT143R). Key electrical characteristics include a minimum drain-source breakdown voltage of 7 V and a maximum continuous drain current of 0.03 A. It exhibits low noise performance and a maximum feedback capacitance of 0.035 pF. The component operates in the ultra-high frequency band and supports complex configurations suitable for RF signal processing tasks.

Feature Summary

  • Dual-gate architecture enabling efficient mixing and amplification functions
  • Low noise design optimized for sensitive RF front-end stages
  • Silicon-based construction ensuring reliability in VHF/UHF bands

Applications

  • VHF band mixer circuits
  • RF small-signal amplification
  • Low noise amplifier stages in communication systems

Procurement Notes

Verify the specific suffix '135' against official NXP documentation to confirm tape-and-reel packaging specifications and pinout orientation. Ensure compatibility with SOT143R footprint requirements during PCB layout. Cross-reference datasheet revision dates to validate parameter consistency before finalizing procurement orders.

Selection Notes

Select this component for designs requiring dual-gate isolation in VHF applications. Consider the 7 V breakdown voltage limit when sizing power supplies. Evaluate the 0.03 A current rating against load requirements. Verify thermal management needs based on the plastic package type and expected operating ambient temperatures.

Part Context

This part belongs to the BF904 series of N-channel dual-gate MOS-FETs from NXP Semiconductors. The series is established for RF applications, with variations often differing in packaging or specific electrical tolerances. The BF904WR variant specifically denotes the reel-packaged version intended for automated assembly processes.

Replacement Considerations

Check for BF904AWR or BF904A equivalents if different packaging is required. Verify functional compatibility with BF909 series devices for similar RF roles. Confirm pinout alignment before substituting.

BF904WR,135BF904WR,135

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